Session information

Poster presentation

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

[18p-PG7-1~2] 15.7 Fundamentals of epitaxy

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG7 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[18p-PG7-1] Two-dimensional nucleation at stacking fault of step source in GaAs microchannel epitaxy

^○Masafumi Tomita¹, Hiroyuki Takakura¹, Muneki Iwakawa¹, Yosuke Mizuno¹, Junpei Yamada¹, Daisuke Knabayashi¹, Shigeya Naritsuka¹, Takahiro Maruyama¹ (Meijo Univ.¹)

1:30 PM - 3:30 PM

[18p-PG7-2] Temperature dependence on growth rate of Ga2O3 layers grown by mist CVD

^○Keisuke Tanuma¹, Mayuka Sugimoto¹, Takumi Hatakeyama¹, Takeyoshi Onuma^1,2, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin Univ.¹, Tokyo National College of Tech²)

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