Oral presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19p-D9-1~18] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Wed. Mar 19, 2014 2:00 PM - 7:00 PM D9 (D315)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30〜14:00 (12:30 PM - 2:00 PM)

2:00 PM - 2:15 PM

△ [19p-D9-1] Ab initio analysis on the stability of metal atoms in β-Si3N4/Si structure

^○（M1）Daiki Shibata¹, Syunsuke Kobayashi¹, Koji Sueoka¹, Jun Komachi², Koichiro Saga² (Okayama Pref. Univ.¹, SONY Corp.²)

2:15 PM - 2:30 PM

△ [19p-D9-2] First-principles analysis on stability of contamination metal atoms in β-Si3N4 surface

^○（M2）Syunsuke Kobayashi¹, Daiki Shibata¹, Koji Sueoka¹, Jun Komachi², Koichiro Saga² (Okayama Pref. Univ.¹, SONY Corp.²)

2:30 PM - 2:45 PM

△ [19p-D9-3] Formation of nanocrystalline Si layer and Si micro-hole by using surface structure chemical transfer method

^○Kentaro Imamura¹, Daichi Irishika¹, Tomoki Akai¹, Hikaru Kobayashi¹ (ISIR,Osaka Univ.¹)

2:45 PM - 3:00 PM

△ [19p-D9-4] Evaluation of strain in Si using tip-enhanced Raman spectroscopy

^○Daisuke Kosemura¹, Motohiro Tomita¹, Che Mohd Yusoff Siti Norhidayah¹, Chie Goto², Tetsunari Kawaguchi², Mayumi Misawa², Atsushi Ogura¹ (Meiji Univ.¹, Bruker AXS²)

3:00 PM - 3:15 PM

△ [19p-D9-5] Excitations of LO/TO Phonons in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy

^○Shotaro Yamamoto¹, Daisuke Kosemura¹, Siti Norhidayah Mohd Yusoff¹, Takahiro Kijima¹, Ryosuke Imai¹, Koji Usuda², Atsushi Ogura¹ (Meiji Univ.¹, AIST-GNC²)

3:15 PM - 3:30 PM

△ [19p-D9-6] Two-dimensional Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate by SRRS

^○Motohiro Tomita^1,2, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (Meiji Univ.¹, JSPS Research Fellow DC², AIST GNC³)

3:30 PM - 3:45 PM

△ [19p-D9-7] Study of Current variability depend on Random Dopant Fluctuation in Source and Drain Region

^○Akito Suzuki¹, Rika Akutsu¹, Hiroya Imai¹, Takefumi Kamioka², Yoshinari Kamakura³, Takanobu Watanabe¹ (Waseda Univ.¹, Toyota Tech. Inst.², Osaka Univ.³)

3:45 PM - 4:00 PM

△ [19p-D9-8] Hydrogen production from silicon nanoparticles fabricated from silicon swarf

^○（M2）Katsuya Kimura^1,3, Masao Takahashi^1,3, Yayoi Kanatani^2,3, Tohru Higo^2,3, Hikaru Kobayashi^1,3 (ISIR Osaka Univ.¹, Nisshin Kase², CREST-JST³)

Break 16:00〜16:15 (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

▲ [19p-D9-9] Spatial Variation in Carrier Concentration in Nanocrystal Ni-Si Films Measured by Multimode Scanning Probe Microscopy

^○Leonid Bolotov^1,2, Noriyuki Uchida², Tetsuya Tada², Toshihiko Kanayama² (University of Tsukuba [Univ. of Tsukuba]¹, Advanced Industrial Science and Technology [AIST]²)

4:30 PM - 4:45 PM

[19p-D9-10] High Density Formation of Mn and Mn-Germanide Nanodots Induced by Remote Hydrogen Plasma

^○Yinghui Wen¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seichi MIyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL², Hiroshima Univ.³)

4:45 PM - 5:00 PM

[19p-D9-11] Characterization of Photoluminescence from P-doped Ge Core Si Quantum Dots

^○（B）Keigo Kondo¹, Yoshihisa Suzuki¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Takeshi Koyama¹, hideo Kishida¹, Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

5:00 PM - 5:15 PM

[19p-D9-12] Electroluminescence from Multiply-Stacking Valency Controlled Si Quantum Dots

^○（M1）Takahisa Yamada¹, Katsunori Makihara¹, Yoshihisa Suzuki¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

5:15 PM - 5:30 PM

[19p-D9-13] Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy (II)

^○Daichi Takeuchi¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL², Hiroshima Univ.³)

Break 17:30〜17:45 (5:30 PM - 5:45 PM)

5:45 PM - 6:00 PM

[19p-D9-14] Effects of laser fluence optical absorption and electric conduction for silicon supersaturated with sulfur by pulsed laser melting method

^○（M1）Katsuki Nagao¹, Mitsuru Inada², Muneyuki Naitou¹, Kengo Norimura¹, Tatsuya Nakai¹, Tamao Aoki¹, Akira Sugimura¹, Ikurou Umezu¹ (Konan Univ¹, Kansai Univ²)

6:00 PM - 6:15 PM

[19p-D9-15] Phase Diagram of Metal Germanide and Schottky Barrier Height at Germanide/Ge Interfaces

^○（DC）Shota Iizuka¹, Takashi Nakayama¹ (Chiba Univ.¹)

6:15 PM - 6:30 PM

[19p-D9-16] First Principles Study of the Relation between Schottky-barrier Change and Interface Structure at Sn/Ge Interfaces

^○Kyosuke Kobinata¹, Takashi Nakayama¹ (Chiba Univ.¹)

6:30 PM - 6:45 PM

[19p-D9-17] Universal Estimation of Work Function of Transition Metal Carbides and Nitrides

^○Michiko Yoshitake¹ (NIMS¹)

6:45 PM - 7:00 PM

▲ [19p-D9-18] Effects of Nitrogen Concentration on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

^oElham Heidari¹, Sohya Koudoh¹, Nithi Atthi¹, Dae-Hee Han¹, Shun-ichiro Ohmi¹ (Tokyo Institute of Technology)