Silicon Technology Division Award

[19a-E4-1~5] Silicon Technology Division Award

Wed. Mar 19, 2014 10:00 AM - 11:45 AM E4 (E104)

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10:00 AM - 10:15 AM

[19a-E4-1] an award ceremony

10:15 AM - 10:45 AM

[19a-E4-2] [Silicon Technology Division Award Speech]Electron-tunneling operation of single-donor-atom transistors at elevated temperatures

Earfan Hamid¹, Daniel Moraru¹, Youhei Kuzuya¹, Takeshi Mizuno¹, Le The Anh², Hiroshi Mizuta^2,3, ^○Michiharu Tabe¹ (Shizuoka Univ.¹, JAIST², Univ. of Southampton³)

10:45 AM - 11:15 AM

[19a-E4-3] [Silicon Technology Division Award Speech]Spin-pump-induced spin transport in p-type Si at room temperature

^○Eiji Shikoh¹, Kazuya Ando², Kazuki Kubo³, Eiji Saitoh⁴, Teruya Shinjo⁵, Masashi Shiraishi⁶ (Osaka City Univ.¹, Keio Univ.², Toyota Motor Corp.³, Tohoku Univ.⁴, Osaka Univ.⁵, Kyoto Univ.⁶)

11:15 AM - 11:30 AM

[19a-E4-4] [Silicon Technology Division Award Speech]Bipolar Resistive Switch Effects in Calcium Fluoride Thin Films Deposited on Silicon Bottom Electrodes

^○Yoshifumi Nishi¹ (Toshiba R&D Center¹)

11:30 AM - 11:45 AM

[19a-E4-5] [Silicon Technology Division Award Speech]Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors

^○Tsunaki Takahashi¹, Nobuyasu Beppu², Kunro Chen², Shunri Oda³, Ken Uchida^1,2 (Dept. of Electrical and Electronics Engineering, Keio Univ.¹, Dept. of Physical Electronics, Tokyo Inst. Tech.², QNERC, Tokyo Inst. Tech.³)

Sessions

Silicon Technology Division Award » Silicon Technology Division Award