Short Oral presentation

[17a-E7-34~39] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Mon. Mar 17, 2014 11:06 AM - 11:18 AM E7 (E201)

ポスター講演　1:30PM～3:30PM　PA（アリーナ）

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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11:06 AM - 11:08 AM

▲ [17a-E7-34] Perpendicular anisotropy in V/Fe_1-xGd_x (x = 0, 10, 20) multilayers

^○（B）Kazuhito Tanaka¹, Yoshiaki Takahashi¹, Yoichi Shiota^1,2, Shinji Miwa^1,2, Eiiti Tamura¹, Norikazu Mizuochi¹, Teruya Shinjo¹, Yoshishige Suzuki^1,2 (Osaka Univ.¹, CREST²)

11:08 AM - 11:10 AM

[17a-E7-35] Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation

^○Kazuya Suzuki¹, Yang Liu¹, Yuji Utsumi¹, Jyunpei Morishita¹, Takeshi Kato², Daiki Oshima², Tomohiko Nizeki³, Ko Mibu⁴, Yanagihara Hideto¹, Eiji Kita¹ (University of Tsukuba¹, Nagoya University², Tohoku University³, Nagoya Institute of Technology⁴)

11:10 AM - 11:12 AM

▲ [17a-E7-36] Fabrication of Magnetic Tunnel Junctions with High TMR Ratio and Low Magnetic Anisotropy for Highly Sensitive Magnetic Sensor

^○Daiki Kato¹, Mikihiko Oogane¹, Kosuke Fujiwara¹, Takuo Nishikawa², Hiroshi Naganuma¹, Yasuo Ando¹ (Tohoku Univ.¹, Konica Minolta Inc.²)

11:12 AM - 11:14 AM

[17a-E7-37] Current-induced Magnetization Switching in Current-Perpendicular-to-Plane Structural Fe₃Si/FeSi₂ Artificial Lattices

^○Kenichiro Sakai^1,2, Yuki Asai¹, Yuta Noda¹, kaoru Takeda³, Tsuyoshi Yoshitake¹ (Kyushu Univ.¹, Kurume Nat. Coll of Tech.², Fukuoka Inst. Tech.³)

11:14 AM - 11:16 AM

▼ [17a-E7-38] Investigation of interfacial specific resistance dependent on Fe-Co alloy composition in CPP-GMR-Tri-layer

^○Zhenhu Jin¹, Jiwon Jung¹, Bin Lao¹, Masashi Sahashi¹ (Tohoku Univ¹)

11:16 AM - 11:18 AM

▼ [17a-E7-39] RF injection locking in vortex-STO with MgO capped FeB free layer

^○Sumito Tsunegi¹, Hitoshi Kubota¹, Kay Yakushiji¹, Shingo Tamaru¹, Akio Fukushima¹, Makoto Konoto¹, Hiroko Arai¹, Hiroshi Imamura¹, Shinji Yuasa¹ (AIST¹)

Oral presentation

[20a-E7-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Thu. Mar 20, 2014 9:00 AM - 12:15 PM E7 (E201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▼ [20a-E7-1] Resonance Readout of Magnetization Direction Using Spin-Torque Oscillator

^○Hirofumi Suto¹, Tazumi Nagasawa¹, Kiwamu Kudo¹, Koichi Mizushima¹, Rie Sato¹ (Toshiba Corp. Corporate R&D Center¹)

9:15 AM - 9:30 AM

▲ [20a-E7-2] Magnetic field sensor utilizing a spin-torque oscillator

^○（PC）Hiroyuki Tomita¹, Hitoshi Kubota², Shinji Miwa¹, Akio Fukushima², Shinji Yuasa², Yoshishige Suzuki¹ (Osaka Univ.¹, AIST Spintronics Research Center²)

9:30 AM - 9:45 AM

▲ [20a-E7-3] Response of Nano-Contact Spin-Torque Oscillator to a Series of Magnetic Pulses

^○Tazumi Nagasawa¹, Hirofumi Suto¹, Kiwamu Kudo¹, Koichi Mizushima¹, Rie Sato¹ (Toshiba Co.¹)

9:45 AM - 10:00 AM

▲ [20a-E7-4] Dependence of oscillation frequency of spin torque oscillator on applied field magnitude

^○Tomohiro Taniguchi¹, Hiroko Arai¹, Sumito Tsunegi¹, Shingo Tamaru¹, Hitoshi Kubota¹, Hiroshi Imamura¹ (SRC, AIST¹)

10:00 AM - 10:15 AM

▲ [20a-E7-5] <001>-textured polycrystalline current-perpendicular-to-plane pseudo spin-valves using full Heusler alloy Co₂Fe(Ga_0.5Ge_0.5)

^○Ye Du^1,2, Bollapragada Varaprasad², Takao Furubayashi², Yukiko Takahashi², Kazuhiro Hono^2,1 (Univ. of Tsukuba¹, NIMS²)

10:15 AM - 10:30 AM

▼ [20a-E7-6] Structural and magneto-transport properties of CPP-GMR pseudo spin-valves with (110) epitaxial layers of Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy

^○（M2）Jiamin CHEN^1,2, Songtian Li², Takao Furubayashi², Yukiko Takahashi², Kazuhiro Hono^1,2 (Tsukuba University¹, National Institute for Materials Science²)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[20a-E7-7] Fabrication of Low-RA p-MTJs with a p-SAF Bottom-Reference Structure

^○Kay Yakushiji¹, Akio Fukushima¹, Hitoshi Kubota¹, Makoto Konoto¹, Shinji Yuasa¹ (AIST¹)

11:00 AM - 11:15 AM

▲ [20a-E7-8] Magnetization process of FeB/MgO/FeB perpendicularly magnetized MTJ with CoPt/Ru/CoPt reference layer

^○Akio Fukushima¹, Kay Yakushiji¹, Makoto Konoto¹, Hitoshi Kubota¹, Shinji Yuasa¹ (SRC AIST¹)

11:15 AM - 11:30 AM

▼ [20a-E7-9] Magnetic tunnel junctions using CoFeB/Ta/[Co/Pd] ferromagnetic electrodes

^○Shinya Ishikawa¹, Hideo Sato², Michihiko Yamanouchi^1,2, Shoji Ikeda^1,2,4, Shunsuke Fukami², Fumihiro Matsukura^3,1,2, Hideo Ohno^1,2,3,4 (Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³, CIES, Tohoku Univ.⁴)

11:30 AM - 11:45 AM

△ [20a-E7-10] Degree of temperature dependence of TMR ratio of Co₂MnSi/MgO/Co₂MnSi MTJs as a function of Mn composition in Co₂MnSi electrodes

^○Yusuke Honda¹, Hongxi Liu¹, Tetsuya Uemura¹, Masafumi Yamamoto¹ (Grad School of IST, Hokkaido Univ.¹)

11:45 AM - 12:00 PM

[20a-E7-11] Magnetic tunnel junctions for bio-magnetic field sensor

Takuo Nishikawa¹, Kousuke Fujiwara², Daiki Kato², Hiroshi Naganuma², ^○Mikihiko Oogane², Yasuo Ando² (Konica Minolta Inc.¹, Tohoku Univ.²)

12:00 PM - 12:15 PM

▲ [20a-E7-12] Magnetic sensors based on MgO-magnetic tunnel junctions with perpendicular magnetized CoFeB sensing layer

^○（M2）Takafumi Nakano¹, Mikihiko Oogane¹, Hiroshi Naganuma¹, Toshifumi Yano², Kenichi Ao², Yasuo Ando¹ (Tohoku Univ.¹, DENSO CORP.²)

Oral presentation

[20p-E7-1~7] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Thu. Mar 20, 2014 1:15 PM - 3:00 PM E7 (E201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:15〜13:15 （12:15 PM - 1:15 PM）

1:15 PM - 1:30 PM

▼ [20p-E7-1] Temperature dependence of electric-field effect on magnetic properties of Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

^○Atsushi Okada¹, Shun Kanai¹, Michihiko Yamanouchi^1,2, Shoji Ikeda^1,2, Fumihiro Matsukura^3,2, Hideo Ohno^1,2,3 (LNS-RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³)

1:30 PM - 1:45 PM

▲ [20p-E7-2] Evaluation of voltage-torque through the voltage-induced ferromagnetic resonance

^○Yoichi Shiota^1,2, Shinji Miwa^1,2, Frédéric Bonell^1,2, Norikazu Mizuochi¹, Teruya Shinjo¹, Yoshishige Suzuki^1,2 (Osaka Univ.¹, JST-CREST²)

1:45 PM - 2:00 PM

▲ [20p-E7-3] Sub-gigahertz ferromagnetic resonance in magnetic tunnel junction

^○Shinji Miwa¹, Hitoshi Kubota², Kay Yakushiji², Shota Ishibashi^1,2, Takeshi Saruya², Akio Fukushima², Shinji Yuasa², Yoshishige Suzuki^1,2 (Osaka Univ.¹, AIST, Spintronics Research Center²)

2:00 PM - 2:15 PM

▲ [20p-E7-4] Magnetization switching by two successive voltage pulses

^○Shun Kanai¹, Hideo Sato², Michihiko Yamanouchi^1,2, Shoji Ikeda^1,2, Yoshinobu Nakatani³, Fumihiro Matsukura^2,4, Hideo Ohno^1,2,4 (LNS-RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², The Univ. of Electro-Communications³, WPI-AIMR, Tohoku Univ.⁴)

2:15 PM - 2:30 PM

▼ [20p-E7-5] Current-induced switching properties under perpendicular magnetic field in magnetic tunnel junctions with perpendicular magnetic easy axis

^○Han Jang¹, Enobio Eli Christopher², Hideo Sato², Shinya Ishikawa¹, Michihiko Yamanouchi^1,2, Shoji Ikeda^1,2,4, Shunske Fukami², Fumihiro Matsukura^1,2,3, Hideo Ohno^1,2,3,4 (Laboratory for Nanoelectronics and Spintronics,Riec,Tohoku Univ.¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³, CIES, Tohoku Univ.⁴)

2:30 PM - 2:45 PM

▼ [20p-E7-6] Top MgO layer thickness dependence of magnetic anisotropy

^○Yoshihisa Horikawa¹, Shinya Ishikawa¹, Shoji Ikeda^1,2,4, Hideo Sato², Shunsuke Fukami², Michihiko Yamanouchi^1,2, Fumihiro Matsukura^1,2,3, Hideo Ohno^1,2,3,4 (RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³, CIES, Tohoku Univ.⁴)

2:45 PM - 3:00 PM

▲ [20p-E7-7] X-ray magnetic circular dichroism study of magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers

^○（DC）Duong Lam^1,3, Frederic Bonell^1,3, Yoichi Shiota^1,3, Kazuhito Tanaka¹, Yoshiaki Takahashi^1,3, Shinji Miwa^1,3, Norikazu Mizuochi¹, Teruya Shinjo¹, Yoshinori Kotani², Tetsuya Nakamura², Yoshishige Suzuki^1,3 (Osaka Univ.¹, JASRI /SPring-8², JST-CREST³)

Sessions

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[17a-E7-34~39] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [17a-E7-34] Perpendicular anisotropy in V/Fe_1-xGd_x (x = 0, 10, 20) multilayers

[17a-E7-35] Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation

▲ [17a-E7-36] Fabrication of Magnetic Tunnel Junctions with High TMR Ratio and Low Magnetic Anisotropy for Highly Sensitive Magnetic Sensor

[17a-E7-37] Current-induced Magnetization Switching in Current-Perpendicular-to-Plane Structural Fe₃Si/FeSi₂ Artificial Lattices

▼ [17a-E7-38] Investigation of interfacial specific resistance dependent on Fe-Co alloy composition in CPP-GMR-Tri-layer

▼ [17a-E7-39] RF injection locking in vortex-STO with MgO capped FeB free layer

[20a-E7-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [20a-E7-1] Resonance Readout of Magnetization Direction Using Spin-Torque Oscillator

▲ [20a-E7-2] Magnetic field sensor utilizing a spin-torque oscillator

▲ [20a-E7-3] Response of Nano-Contact Spin-Torque Oscillator to a Series of Magnetic Pulses

▲ [20a-E7-4] Dependence of oscillation frequency of spin torque oscillator on applied field magnitude

▲ [20a-E7-5] <001>-textured polycrystalline current-perpendicular-to-plane pseudo spin-valves using full Heusler alloy Co₂Fe(Ga_0.5Ge_0.5)

▼ [20a-E7-6] Structural and magneto-transport properties of CPP-GMR pseudo spin-valves with (110) epitaxial layers of Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy

[20a-E7-7] Fabrication of Low-RA p-MTJs with a p-SAF Bottom-Reference Structure

▲ [20a-E7-8] Magnetization process of FeB/MgO/FeB perpendicularly magnetized MTJ with CoPt/Ru/CoPt reference layer

▼ [20a-E7-9] Magnetic tunnel junctions using CoFeB/Ta/[Co/Pd] ferromagnetic electrodes

△ [20a-E7-10] Degree of temperature dependence of TMR ratio of Co₂MnSi/MgO/Co₂MnSi MTJs as a function of Mn composition in Co₂MnSi electrodes

[20a-E7-11] Magnetic tunnel junctions for bio-magnetic field sensor

▲ [20a-E7-12] Magnetic sensors based on MgO-magnetic tunnel junctions with perpendicular magnetized CoFeB sensing layer

[20p-E7-1~7] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [20p-E7-1] Temperature dependence of electric-field effect on magnetic properties of Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

▲ [20p-E7-2] Evaluation of voltage-torque through the voltage-induced ferromagnetic resonance

▲ [20p-E7-3] Sub-gigahertz ferromagnetic resonance in magnetic tunnel junction

▲ [20p-E7-4] Magnetization switching by two successive voltage pulses

▼ [20p-E7-5] Current-induced switching properties under perpendicular magnetic field in magnetic tunnel junctions with perpendicular magnetic easy axis

▼ [20p-E7-6] Top MgO layer thickness dependence of magnetic anisotropy

▲ [20p-E7-7] X-ray magnetic circular dichroism study of magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers

Sessions

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[17a-E7-34~39] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [17a-E7-34] Perpendicular anisotropy in V/Fe1-xGdx (x = 0, 10, 20) multilayers

[17a-E7-35] Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation

▲ [17a-E7-36] Fabrication of Magnetic Tunnel Junctions with High TMR Ratio and Low Magnetic Anisotropy for Highly Sensitive Magnetic Sensor

[17a-E7-37] Current-induced Magnetization Switching in Current-Perpendicular-to-Plane Structural Fe3Si/FeSi2 Artificial Lattices

▼ [17a-E7-38] Investigation of interfacial specific resistance dependent on Fe-Co alloy composition in CPP-GMR-Tri-layer

▼ [17a-E7-39] RF injection locking in vortex-STO with MgO capped FeB free layer

[20a-E7-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [20a-E7-1] Resonance Readout of Magnetization Direction Using Spin-Torque Oscillator

▲ [20a-E7-2] Magnetic field sensor utilizing a spin-torque oscillator

▲ [20a-E7-3] Response of Nano-Contact Spin-Torque Oscillator to a Series of Magnetic Pulses

▲ [20a-E7-4] Dependence of oscillation frequency of spin torque oscillator on applied field magnitude

▲ [20a-E7-5] <001>-textured polycrystalline current-perpendicular-to-plane pseudo spin-valves using full Heusler alloy Co2Fe(Ga0.5Ge0.5)

▼ [20a-E7-6] Structural and magneto-transport properties of CPP-GMR pseudo spin-valves with (110) epitaxial layers of Co2Fe(Ge0.5Ga0.5) Heusler alloy

[20a-E7-7] Fabrication of Low-RA p-MTJs with a p-SAF Bottom-Reference Structure

▲ [20a-E7-8] Magnetization process of FeB/MgO/FeB perpendicularly magnetized MTJ with CoPt/Ru/CoPt reference layer

▼ [20a-E7-9] Magnetic tunnel junctions using CoFeB/Ta/[Co/Pd] ferromagnetic electrodes

△ [20a-E7-10] Degree of temperature dependence of TMR ratio of Co2MnSi/MgO/Co2MnSi MTJs as a function of Mn composition in Co2MnSi electrodes

[20a-E7-11] Magnetic tunnel junctions for bio-magnetic field sensor

▲ [20a-E7-12] Magnetic sensors based on MgO-magnetic tunnel junctions with perpendicular magnetized CoFeB sensing layer

[20p-E7-1~7] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [20p-E7-1] Temperature dependence of electric-field effect on magnetic properties of Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

▲ [20p-E7-2] Evaluation of voltage-torque through the voltage-induced ferromagnetic resonance

▲ [20p-E7-3] Sub-gigahertz ferromagnetic resonance in magnetic tunnel junction

▲ [20p-E7-4] Magnetization switching by two successive voltage pulses

▼ [20p-E7-5] Current-induced switching properties under perpendicular magnetic field in magnetic tunnel junctions with perpendicular magnetic easy axis

▼ [20p-E7-6] Top MgO layer thickness dependence of magnetic anisotropy

▲ [20p-E7-7] X-ray magnetic circular dichroism study of magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers

▲ [17a-E7-34] Perpendicular anisotropy in V/Fe_1-xGd_x (x = 0, 10, 20) multilayers

[17a-E7-37] Current-induced Magnetization Switching in Current-Perpendicular-to-Plane Structural Fe₃Si/FeSi₂ Artificial Lattices

▲ [20a-E7-5] <001>-textured polycrystalline current-perpendicular-to-plane pseudo spin-valves using full Heusler alloy Co₂Fe(Ga_0.5Ge_0.5)

▼ [20a-E7-6] Structural and magneto-transport properties of CPP-GMR pseudo spin-valves with (110) epitaxial layers of Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy

△ [20a-E7-10] Degree of temperature dependence of TMR ratio of Co₂MnSi/MgO/Co₂MnSi MTJs as a function of Mn composition in Co₂MnSi electrodes