^○Makoto Yamamoto¹, Sayuri Ooiwa², Sinohara Shuhei², Kaoru Tamada², Rieko Ueda³, Toshifumi Terui³, Hisao Ishii^1,4, Yutaka Noguchi^1,4 (AIS Chiba Univ.¹, Kyusyu Univ.², KARC NICT³, CFS Chiba Univ.⁴)

3:00 PM - 3:15 PM

[17p-F11-5] Electron transport in Ce@C82 endohedral metallofullerene single molecule transistors

^○Naoya Okamura¹, Shuichi Sakata¹, Kenji Yoshida¹, Kazuhiko Hirakawa^1,2 (IIS Univ. of Tokyo¹, INQIE²)

3:15 PM - 3:30 PM

△ [17p-F11-6] THz photon assisted tunneling in single molecule transistors

^○（PC）Kenji Yoshida¹, Kenji Shibata¹, Naoya Okamura¹, Kazuhiko Hirakawa¹ (IIS & INQIE, Univ. of Tokyo¹)

3:30 PM - 3:45 PM

[17p-F11-7] Relationship between Density of Nanogap Electrodes and Growth Velocity of Electroless Gold Plating

^○Eiki Aoyama^1,2, Toshiharu Teranishi^2,3, Yutaka Majima^1,2 (Tokyo Tech.¹, CREST-JST², Kyoto Univ.³)

Break 15:45〜16:00 （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[17p-F11-8] Vertical Asymmetric Nanogap Electrodes Fabricated by Electroless Gold Plating (EGP)

^○Yuto Onuma^1,2, Yutaka Majima^1,2 (Tokyo Tech.¹, CREST-JST²)

4:15 PM - 4:30 PM

[17p-F11-9] Tunneling Resistance of Porphyrin Ligand Protected Au Nanoparticle

^○Makoto Kawamoto^1,2, Yoshiki Kobayashi^1,2, Daisuke Tanaka^2,3, Masanori Sakamoto^2,3, Toshiharu Teranishi^2,3, Yutaka Majima^1,2 (Tokyo Tech.¹, CREST-JST², Kyoto Univ.³)

4:30 PM - 4:45 PM

▼ [17p-F11-10] Self-terminated Nanogap Electrodes by Electroless Gold Plating

^○Victor Serdio^1,2, Shuhei Takeshita^1,2, Yasuo Azuma^1,2, Toshiharu Teranishi^2,3, Yutaka Majima^1,2 (Tokyo Tech¹, CREST-JST², Kyoto Univ³)

4:45 PM - 5:00 PM

[17p-F11-11] Resistive Switching of Ni Nanogaps Using Field-Emission-Induced Electromigration

^○Kazuki Takikawa¹, Ryutaro Suda¹, Mitsuki Ito¹, Kohei Morihara¹, Takahiro Toyonaka¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

5:00 PM - 5:15 PM

[17p-F11-12] Tuning of Tunnel Resistance of Suspended Ni Nanogaps by Filed-Emission-Induced Electromigration

^○Takahiro Toyonaka¹, Ryutaro Suda¹, Mitsuki Ito¹, Kohei Morihara¹, Kazuki Takikawa¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

5:15 PM - 5:30 PM

[17p-F11-13] Fabrication of Nanogaps Using Feedback-Controlled Electromigration Tuned by FPGA

^○Yuma Kanamaru¹, Masazumi Ando¹, Ryutaro Suda¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

5:30 PM - 5:45 PM

[17p-F11-14] Tuning of Resistance of Au Nanowires by Feedback-Controlled Electromigration Using Real Time Operating System (RTOS)

^○Masazumi Ando¹, Yuma Kanamaru¹, Ryutaro Suda¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

Poster presentation

[18p-PG10-1~7] 9.3 Nanoelectronics

Tue. Mar 18, 2014 4:00 PM - 6:00 PM PG10 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

4:00 PM - 6:00 PM

[18p-PG10-1] Electrical Measurements of Ferritin Particles by Scanning Probe Microscopy

^○Kou Miyagishi¹, Hiroki Kosuga¹, Yukiharu Uraoka², Ichirou Yamashita², Shinichi Yamamoto¹ (Ryukoku Univ¹, NAIST²)

4:00 PM - 6:00 PM

[18p-PG10-2] The study of hardened noble metal contacts applied by nano-plating technique

^○Shinji Kouno¹, Mikiko Saito² (Tanaka Kikinzoku Kogyo¹, Waseda Univ.²)

4:00 PM - 6:00 PM

△ [18p-PG10-3] Analysis of wire rupturing process to apply the electromigration to nanostructure fabrication techniques

^○（D）Yosuke Murakami¹, Masashi Arita¹, Yasuo Takahashi¹ (Graduate School of IST, Hokkaido Univ.¹)

4:00 PM - 6:00 PM

[18p-PG10-4] Fabrication and Control of Quantum Point Contacts by Field-Emission-Induced Electromigration

^○Ryutaro Suda¹, Mitsuki Ito¹, Kohei Morihara¹, Takahiro Toyonaka¹, Kazuki Takikawa¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

4:00 PM - 6:00 PM

[18p-PG10-5] Integration of Series-Parallel-Connected Nanogaps by Field-Emission-Induced Electromigration

^○Mitsuki Ito¹, Ryutaro Suda¹, Kohei Morihara¹, Takahiro Toyonaka¹, Kazuki Takikawa¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

4:00 PM - 6:00 PM

[18p-PG10-6] Fabrication of Series-Connected Nanogaps by Field-Emission-Induced Electromigration with High Preset Current Bias

^○Kohei Morihara¹, Mitsuki Ito¹, Ryutaro Suda¹, Takahiro Toyonaka¹, Kazuki Takikawa¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

4:00 PM - 6:00 PM

[18p-PG10-7] In-Situ Imaging of Structural Change of Nanochannel during Electromigration by Atomic Force Microscopy

^○Mamiko Yagi¹, Ryutaro Suda¹, Takanari Saito¹, Jun-ichi Shirakashi¹ (Tokyo Univ. of Agr. & Tech.¹)

Sessions

09. Applied Materials Science » 9.3 Nanoelectronics

[17a-F11-1~11] 9.3 Nanoelectronics

[17a-F11-1] Signal transport control for single-electron DOMINO logic circuit

[17a-F11-2] Novel single-electron information-processing circuit based on robust soldier crab ball gates

[17a-F11-3] Novel single-electron information-processing circuits mimicking behavior of ant groups (3)

[17a-F11-4] Thermal-noise-supported signal detection in two-dimensional quantum dot network

[17a-F11-5] Study of thermal-noise-assisted signal propagation in neuromorphic single-electron circuit

[17a-F11-6] Design Theory of A Nonlinear Function and Parameters for Detecting Weak Signal in Noise

[17a-F11-7] Electronic Amoeba for Searching Solutions of Optimization Problems

△ [17a-F11-8] Hysteresis characteristics of GaAs-based etched nanowire MISFETs

△ [17a-F11-9] Investigation of the surface dependence of the nonlinear characteristics in the GaAs-based three branch nanowire junction devices

[17a-F11-10] Detection of molecular charge dynamics by analyzing noise in a GaAs-based nanowire FET

▲ [17a-F11-11] Thermoelectricity of C₈₂ and Gd@C₈₂ Molecular Junctions

[17p-F11-1~14] 9.3 Nanoelectronics

[17p-F11-1] In-Situ Temperature Measurements of Thin Graphite Wire under Current Flow

[17p-F11-2] Operation of a micro-refrigerator comprising superconductive vanadium leads and a normal-conductive aluminium electrode

[17p-F11-3] Characteristics of Single-electron Transistor with Input Discretizer

[17p-F11-4] Fabrication of Ag nanoparticle single-electron transistor

[17p-F11-5] Electron transport in Ce@C82 endohedral metallofullerene single molecule transistors

△ [17p-F11-6] THz photon assisted tunneling in single molecule transistors

[17p-F11-7] Relationship between Density of Nanogap Electrodes and Growth Velocity of Electroless Gold Plating

[17p-F11-8] Vertical Asymmetric Nanogap Electrodes Fabricated by Electroless Gold Plating (EGP)

[17p-F11-9] Tunneling Resistance of Porphyrin Ligand Protected Au Nanoparticle

▼ [17p-F11-10] Self-terminated Nanogap Electrodes by Electroless Gold Plating

[17p-F11-11] Resistive Switching of Ni Nanogaps Using Field-Emission-Induced Electromigration

[17p-F11-12] Tuning of Tunnel Resistance of Suspended Ni Nanogaps by Filed-Emission-Induced Electromigration

[17p-F11-13] Fabrication of Nanogaps Using Feedback-Controlled Electromigration Tuned by FPGA

[17p-F11-14] Tuning of Resistance of Au Nanowires by Feedback-Controlled Electromigration Using Real Time Operating System (RTOS)

[18p-PG10-1~7] 9.3 Nanoelectronics

[18p-PG10-1] Electrical Measurements of Ferritin Particles by Scanning Probe Microscopy

[18p-PG10-2] The study of hardened noble metal contacts applied by nano-plating technique

△ [18p-PG10-3] Analysis of wire rupturing process to apply the electromigration to nanostructure fabrication techniques

[18p-PG10-4] Fabrication and Control of Quantum Point Contacts by Field-Emission-Induced Electromigration

[18p-PG10-5] Integration of Series-Parallel-Connected Nanogaps by Field-Emission-Induced Electromigration

[18p-PG10-6] Fabrication of Series-Connected Nanogaps by Field-Emission-Induced Electromigration with High Preset Current Bias

[18p-PG10-7] In-Situ Imaging of Structural Change of Nanochannel during Electromigration by Atomic Force Microscopy

Sessions

09. Applied Materials Science » 9.3 Nanoelectronics

[17a-F11-1~11] 9.3 Nanoelectronics

△ [17a-F11-8] Hysteresis characteristics of GaAs-based etched nanowire MISFETs

△ [17a-F11-9] Investigation of the surface dependence of the nonlinear characteristics in the GaAs-based three branch nanowire junction devices

▲ [17a-F11-11] Thermoelectricity of C82 and Gd@C82 Molecular Junctions

[17p-F11-1~14] 9.3 Nanoelectronics

△ [17p-F11-6] THz photon assisted tunneling in single molecule transistors

▼ [17p-F11-10] Self-terminated Nanogap Electrodes by Electroless Gold Plating

[18p-PG10-1~7] 9.3 Nanoelectronics

△ [18p-PG10-3] Analysis of wire rupturing process to apply the electromigration to nanostructure fabrication techniques

▲ [17a-F11-11] Thermoelectricity of C₈₂ and Gd@C₈₂ Molecular Junctions