Refined estimate of high-resistance p-type ZnO:N thin film 〜Verification of double donor originating from N<sub>2(O)</sub>〜

Keisuke Noda

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Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[17a-E10-1~11] Nanocarbon Technology

Mon. Mar 17, 2014 9:00 AM - 12:00 PM E10 (E204)

11:45 AM - 12:00 PM

△ [17a-E10-11] Refined estimate of high-resistance p-type ZnO:N thin film 〜Verification of double donor originating from N_2(O)〜

^○Keisuke Noda¹, Takuya Masamoto¹, ryota Kidera², Takuro Matsuo¹, Shinya Hiroe¹, Akimasa Akiyama¹, Takaaki Yukue¹, Akihiro Okuyama², Tomoki Abe¹, Hirohumi Kasada¹, Koshi Ando¹ (Tottori Univ.¹, Tottori Univ.²)

Keywords:ZnO,MBE,p型伝導制御

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Presentation information

[17a-E10-1~11] Nanocarbon Technology

△ [17a-E10-11] Refined estimate of high-resistance p-type ZnO:N thin film 〜Verification of double donor originating from N2(O)〜

△ [17a-E10-11] Refined estimate of high-resistance p-type ZnO:N thin film 〜Verification of double donor originating from N_2(O)〜