The 61st JSAP Spring Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

[17a-E11-1~5] 15.7 Fundamentals of epitaxy

Mon. Mar 17, 2014 9:00 AM - 10:15 AM E11 (E205)

9:45 AM - 10:00 AM

[17a-E11-4] Interfacial structure of InAs epitaxial film grown on Si(111)-(4×1)-In surface

○Yuka Nakata1,2, Takuo Sasaki2, Ryota Deki1, Masamitu Takahasi1,2 (Univ. of Hyogo1, JAEA2)

Keywords:InAs,界面構造,放射光X線回折