^○Masafumi Tomita¹, Hiroyuki Takakura¹, Muneki Iwakawa¹, Yosuke Mizuno¹, Junpei Yamada¹, Daisuke Knabayashi¹, Shigeya Naritsuka¹, Takahiro Maruyama¹ (Meijo Univ.¹)

1:30 PM - 3:30 PM

[18p-PG7-2] Temperature dependence on growth rate of Ga2O3 layers grown by mist CVD

^○Keisuke Tanuma¹, Mayuka Sugimoto¹, Takumi Hatakeyama¹, Takeyoshi Onuma^1,2, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin Univ.¹, Tokyo National College of Tech²)

Sessions

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

[17a-E11-1~5] 15.7 Fundamentals of epitaxy

[17a-E11-1] Formation of Defect-free Epitaxial Alumina Substrate by Stress Release

[17a-E11-2] A Simple Approach to the Stability of the Graphitic Structure

[17a-E11-3] First-Principles Molecular Dynamics Simulations for Early Stage of Graphene Growth Process on SiC Substrate

[17a-E11-4] Interfacial structure of InAs epitaxial film grown on Si(111)-(4×1)-In surface

[17a-E11-5] in-situ observations of 3D InAs island structures growth on GaAs(001) by STMBE

[18p-PG7-1~2] 15.7 Fundamentals of epitaxy

[18p-PG7-1] Two-dimensional nucleation at stacking fault of step source in GaAs microchannel epitaxy

[18p-PG7-2] Temperature dependence on growth rate of Ga2O3 layers grown by mist CVD