[17a-E11-6~10] 15.3 III-V-group epitaxial crystals

[17a-E11-7] Growth of metamorphic InGaAs on GaAs(111)A using thin InAs layer

^○Takaaki Mano¹, Neul Ha^1,2, Kazutaka Mitsuishi¹, Takashi Kuroda^1,2, Akihiro Ohtake¹, Andrea Castellano^1,3, Stefano Sanguinetti³, Takeshi noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (NIMS¹, Kyushu Univ.², Univ. Milano Bicocca³)

Keywords:分子線エピタキシー,InGaAs,格子緩和