Oral presentation

[17a-E11-6~10] 15.3 III-V-group epitaxial crystals

Mon. Mar 17, 2014 10:30 AM - 11:45 AM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:30 AM - 10:45 AM

[17a-E11-6] In situ XRD observation during modulated capping of InAs quantum dots

^○Kenichi Shimomura¹, Hidetoshi Suzuki², Takuo Sasaki³, Masamitu Takahasi³, Yoshio Ohshita¹, Itaru Kamiya¹ (Toyota Tech. Inst.¹, IRO, Univ. Miyazaki², JAEA³)

10:45 AM - 11:00 AM

[17a-E11-7] Growth of metamorphic InGaAs on GaAs(111)A using thin InAs layer

^○Takaaki Mano¹, Neul Ha^1,2, Kazutaka Mitsuishi¹, Takashi Kuroda^1,2, Akihiro Ohtake¹, Andrea Castellano^1,3, Stefano Sanguinetti³, Takeshi noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (NIMS¹, Kyushu Univ.², Univ. Milano Bicocca³)

11:00 AM - 11:15 AM

[17a-E11-8] Variation of Lattice Constant at the Formation of Nitrogen delta-doped Layer on GaAs(001)

Norihisa Nishimoto¹, Masahiko Kondow¹, ^○Fumitaro Ishikawa² (Osaka Univ.¹, Ehime Univ.²)

11:15 AM - 11:30 AM

[17a-E11-9] Reduction of wafer curvature after growth using thin metamorphic buffer by in-situ wafer-curvature measurement

^○Ryo Nakao¹, Masakazu Arai¹, Ryuzo Iga¹, Masaki Kohtoku¹ (NTT Photonics Laboratories¹)

11:30 AM - 11:45 AM

[17a-E11-10] Strained InGaP/InGaP MQW grown on misoriented GaAs (100) substrate by MOMBE

^○Manabu Mitsuhara¹, Noriyuki Watanabe¹, Haruki Yokoyama¹, Naoteru Shigekawa² (NTT Photonics Labs.¹, Osaka City Univ.²)

Oral presentation

[17p-E11-1~15] 15.3 III-V-group epitaxial crystals

Mon. Mar 17, 2014 1:30 PM - 5:30 PM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:30 （11:45 AM - 1:30 PM）

1:30 PM - 1:45 PM

△ [17p-E11-1] Growth of InAs/GaAs quantum dots using a growth suppression phenomenon and their optical properties

^○（D）Jinkwan Kwoen¹, Masahiro Kakuda², Katsuyuki Watanabe¹, Yasutomo Ota², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

1:45 PM - 2:00 PM

[17p-E11-2] Energy Distribution of State Density of an InAs Quantum Dot Layer

^○Takuya Hoshii¹, Yoshitaka Okada¹ (The Univ. of Tokyo, RCAST¹)

2:00 PM - 2:15 PM

[17p-E11-3] Long PL decay time of in-plane ultrahigh-density InAs QD layers

^○Shunsuke Uchida¹, Miyuki Shiokawa¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

2:15 PM - 2:30 PM

[17p-E11-4] Photoluminescence properties of closely stacked InAs quantum-dots on self-formed GaAs nanoholes

^○Hiroyuki Yamashita¹, Yuta Takahashi¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

2:30 PM - 2:45 PM

[17p-E11-5] Sub-threshold polarized optical gain of closely stacked InAs/GaAs quantum dots

^○Takaya Andachi¹, Masaya Suwa¹, Takuya Matsumura¹, Tomoyuki Ohashi¹, Takashi Kita¹ (Kobe Univ.¹)

2:45 PM - 3:00 PM

[17p-E11-6] Thermal carrier activation properties in InAs/Al_xGa_1-xAs quantum-dots

^○Shigeo Asahi¹, Haruyuki Teranishi¹, Naofumi Kasamatsu¹, Tomoyuki Kada¹, Toshiyuki Kaizu¹, Takashi Kita¹ (Kobe Univ.¹)

3:00 PM - 3:15 PM

[17p-E11-7] Self-formation of InAs quantum dots on nitrogen δ-doped GaAs(001)

^○Toshiyuki Kaizu^1,2, Kohei Taguchi², Takashi Kita² (CSREA, Kobe Univ.¹, Faculty of Eng., Kobe Univ.²)

3:15 PM - 3:30 PM

▼ [17p-E11-8] Formation of InAs quantum dots on InP(111)A by droplet epitaxy and their optical emission at 1.3μm and 1.55μm

^○Neul Ha^1,2, Xiangming Liu¹, Takaaki Mano¹, Takashi Kuroda^1,2, Kazutaka Mitsuishi¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (NIMS¹, Univ. Kyushu²)

Break 15:30〜15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[17p-E11-9] Molecular Beam Epitaxy of InAs dots on anodized InP substrates

^○Kuniyuki Yokobori¹, Taihei Iwasaki¹, Yoshitaka Morishita¹ (Tokyo Univ. of Agri & Tech¹)

4:00 PM - 4:15 PM

[17p-E11-10] SLD based on multiple InAs quantum dots for OCT light source

^○（M1）Takuma Yasuda¹, Hiroshi Shibata¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Hirotaka Ohsato³, Eiichirou Watanabe³, Yoshimasa Sugimoto³, Richard Hogg⁴ (Wakayama Univ.¹, NEC Corp.², NIMS³, Univ. Sheffield⁴)

4:15 PM - 4:30 PM

[17p-E11-11] OCT imaging by using SLD based on InAs quantum dots

^○（M1）Hiroshi Shibata¹, Takuma Yasuda¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Hirotaka Ohsato³, Eiichirou Watanabe³, Yoshimasa Sugimoto³, Richard Hogg⁴ (Wakayama Univ.¹, NEC Corp.², NIMS³, Univ. Sheffield⁴)

4:30 PM - 4:45 PM

▲ [17p-E11-12] Effect of Annealing of GaAs/Al(Ga)As Buffer Layer on the Photoluminescence Intensity of InAs/GaAs Quantum Dots Grown on Ge/Si Substrate by MOCVD

^○（PC）Rajesh Mohan¹, Makoto Miura^2,3, Masao Nishioka¹, Yasuhiko Arakawa¹ (NanoQuine, Tokuo Univ¹, PETRA, Japan², PECST, Japan³)

4:45 PM - 5:00 PM

[17p-E11-13] Electronic states of epitaxial two-dimensional nitrogen atomic sheet in GaAs

^○Yukihiro Harada¹, Takeshi Baba¹, Takashi Kita¹ (Kobe Univ.¹)

5:00 PM - 5:15 PM

△ [17p-E11-14] Effectiveness of surface nitridation on growth of dilute nitride GaAsN alloys

^○Noriyuki Urakami¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara¹ (Toyohashi Tech.¹, Toyohashi Tech.EIIRIS²)

5:15 PM - 5:30 PM

[17p-E11-15] Effect of crystal growth method on the microstructure of nitrogen-related localized state in GaAsN thin film

^○（D）Wen Ding¹, Goshi Morioka¹, Naoki Fujita¹, Akio Suzuki¹, Hidetoshi Suzuki¹, Atsuhiko Fukuyama¹, Masahito Yamaguchi², Tetso Ikari¹ (Univ. of Miyazaki¹, Toyota Technological Inst.²)

Oral presentation

[18a-E11-1~8] 15.3 III-V-group epitaxial crystals

Tue. Mar 18, 2014 9:30 AM - 11:45 AM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[18a-E11-1] Corrugation suppression of periodically-inverted GaAs epilayers using As₂ for MBE growth

^○Ryota Narasaki¹, Tomonori Matsushita¹, Takashi Kondo¹ (The Univ. of Tokyo¹)

9:45 AM - 10:00 AM

[18a-E11-2] MBE growth and characterization of laser-quality GaAs_1-xBi_x

^○（M1）Ryo Yoshioka¹, Takuma Fuyuki¹, Masahiro Yoshimoto¹ (Kyoto Inst. Tech.¹)

10:00 AM - 10:15 AM

[18a-E11-3] Analysis of crystal structure of low-temperature-grown In_xGa_1-xAs on InP substrate

^○Yoriko Tominaga¹, Yuki Tomiyasu¹, Yutaka Kadoya¹ (AdSM, Hiroshima Univ.¹)

10:15 AM - 10:30 AM

[18a-E11-4] optical properties of InGaAs and InAlAs layers grown on (775) B InP substrate by MBE and indium composition dependence.

^○Shun Morisada¹ (Ehime Univ.¹)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-E11-5] EL characteristic of InAsSbN SQWs on InP

Shougo Misuta¹, ^○Yuichi Kawamura¹ (Osaka Prefecture Univ.¹)

11:00 AM - 11:15 AM

[18a-E11-6] Metamorphic ultrafast photo-conductive multi-nanolayer structure in the 1-μm wavelength region for efficient terahertz emission

^○Kouichi Akahane¹, Norihiko Sekine¹, Isao Morohashi¹, Iwao Hosako¹ (NICT¹)

11:15 AM - 11:30 AM

[18a-E11-7] Improvement of surface roughness of thin film InP layer directly-bonded on Si substrate

^○Keiichi Matsumoto¹, Ryouta Kobie¹, Junya Kishikawa¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

11:30 AM - 11:45 AM

△ [18a-E11-8] Fabrication of InGaAsP/InP buried heterostructure on SiO₂/Si substrate by MOVPE growth on InP transferred thin film

^○Takuro Fujii¹, Tomonari Sato¹, Koji Takeda¹, Koichi Hasebe¹, Takaaki Kakitsuka¹, Shinji Matsuo¹ (NTT Photonics Labs.¹)

Poster presentation

[18p-PG6-1~15] 15.3 III-V-group epitaxial crystals

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG6 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[18p-PG6-1] Wave functions of electrons and holes in the MBE growth of AlGaAs/AlAs type II quantum wells

^○takatoshi Nomura¹, Satoshi Shimomura¹, Sho Shirakata¹, Hisao Kondoh¹, Tadashi Fukuzawa² (Ehime Univ.¹, JST²)

1:30 PM - 3:30 PM

[18p-PG6-2] First-principles theoretical study of optical properties of oxy-gen-doped II-VI semiconductors

^○Masato Ishikawa¹, Takashi Nakayama¹ (Department of Physics, Chiba Univ¹)

1:30 PM - 3:30 PM

[18p-PG6-3] Growth temperature dependence of InP nanowires grown by self-assisted VLS mode

^○Takehiro Ogino¹, Masayuki Yamauti¹, Yuta Yamamoto¹, Kazuhiko Shimomura¹, Takao Waho¹ (Sophia Univ.¹)

1:30 PM - 3:30 PM

[18p-PG6-4] Air-Hole Retained Growth on Air/GaAs 2D Photonic-Crystal Structure by MBE -Possibility of Air-Hole Shape Control by Substrate Temperature-

^○Kyohei Maekawa¹, Masaya Nishimoto¹, Kenji Ishizaki¹, Kyoko Kitamura², Susumu Noda¹ (Kyoto Univ.¹, Kyoto Univ.²)

1:30 PM - 3:30 PM

[18p-PG6-5] Multi-stacked InAs QDs structure grown on directly-bonded InP/Si substrate

^○Junya kishikawa¹, Keiichi Matsumoto¹, Xinxin Zhang¹, Yoshinori Kanaya¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

1:30 PM - 3:30 PM

[18p-PG6-6] MOVPE growth of GaInAsP system on directly-bonded InP/GaAs substrate

^○Yoshinori Kanaya¹, Keiichi Matsumoto¹, Ryouta Kobie¹, Junya Kishikawa¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

1:30 PM - 3:30 PM

△ [18p-PG6-7] Fabrication and characterization of InAsXSb01-x crystal for narrow band gap device application

^○Fujikawa Sachie¹, Takagi Yusuke¹, Maeda Takaomi¹, Fujishiro Hiroki¹ (Tokyo Univ. of Science¹)

1:30 PM - 3:30 PM

[18p-PG6-8] Capacitance-voltage characteristics of C60 doped GaAs diodes grown by MBE

^○Jiro Nishinaga¹, Yoshiji Horikoshi² (Waseda Univ.¹, Waseda Univ.²)

1:30 PM - 3:30 PM

[18p-PG6-9] Formation of an ultra-thin, crystalline AlO_x tunnel layer on GaAs by MBE

^○（P）Nozomi Nishizawa¹, Hiro Munekata¹ (Imaging Sci. & Eng. Lab., Tokyo Inst. of Tech.¹)

1:30 PM - 3:30 PM

[18p-PG6-10] In-situ reflectivity measurement under growth of GaAs/InGaAs buffer on silicon

^○Masakazu Arai¹, Ryo Nakazo¹, Ryuzo Iga¹, Masaki Kohtoku¹ (NTT Photonics Lab.¹)

1:30 PM - 3:30 PM

[18p-PG6-11] In composition dependence of dislocation formation processes of initial growth in InGaAs/GaAs thin film using reciprocal space mapping

^○Jun Takahira¹, Rin Kei¹, Hidetoshi Suzuki¹, Kouji Maeda¹, Tetsuo Ikari¹ (Miyazaki Univ.¹)

1:30 PM - 3:30 PM

▲ [18p-PG6-12] Study of high background doping in p-type GaAsN grown by chemical beam epitaxy

^○（D）Omar Elleuch¹, Hiroyuki Kowaki¹, Boussairi Bouzazi¹, Kazuma Ikeda¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (Toyota Technological Institute¹, Toyota Technological Institute², Toyota Technological Institute³, Toyota Technological Institute⁴, Toyota Technological Institute⁵, Toyota Technological Institute⁶, Toyota Technological Institute⁷)

1:30 PM - 3:30 PM

▲ [18p-PG6-13] Recombination center in p-GaAsN grown by chemical beam epitaxy

Hiroyuki Kowaki¹, ^○（D）Omar Elleuch¹, Kazuma Ikeda¹, Boussairi Bouzazi¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (Toyota Technological Institute¹, Toyota Technological Institute², Toyota Technological Institute³, Toyota Technological Institute⁴, Toyota Technological Institute⁵, Toyota Technological Institute⁶, Toyota Technological Institute⁷)

1:30 PM - 3:30 PM

[18p-PG6-14] Wideband optical emission properties of high-density InAs QDs

^○Kazuhiro Yamada¹, Masato Yamamoto¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

1:30 PM - 3:30 PM

[18p-PG6-15] Self-formation od ultrahigh-density InAs quantum dots(10¹²cm^-2) on InAsSb layers(2)

^○Kazuki Sameshima¹, Takuya Sano¹, Koichi Yamaguchi¹ (Univ.of Electro-Communications¹)

Sessions

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[17a-E11-6~10] 15.3 III-V-group epitaxial crystals

[17p-E11-1~15] 15.3 III-V-group epitaxial crystals

△ [17p-E11-1] Growth of InAs/GaAs quantum dots using a growth suppression phenomenon and their optical properties

▼ [17p-E11-8] Formation of InAs quantum dots on InP(111)A by droplet epitaxy and their optical emission at 1.3μm and 1.55μm

▲ [17p-E11-12] Effect of Annealing of GaAs/Al(Ga)As Buffer Layer on the Photoluminescence Intensity of InAs/GaAs Quantum Dots Grown on Ge/Si Substrate by MOCVD

△ [17p-E11-14] Effectiveness of surface nitridation on growth of dilute nitride GaAsN alloys

[18a-E11-1~8] 15.3 III-V-group epitaxial crystals

△ [18a-E11-8] Fabrication of InGaAsP/InP buried heterostructure on SiO2/Si substrate by MOVPE growth on InP transferred thin film

[18p-PG6-1~15] 15.3 III-V-group epitaxial crystals

△ [18p-PG6-7] Fabrication and characterization of InAsXSb01-x crystal for narrow band gap device application

▲ [18p-PG6-12] Study of high background doping in p-type GaAsN grown by chemical beam epitaxy

▲ [18p-PG6-13] Recombination center in p-GaAsN grown by chemical beam epitaxy

△ [18a-E11-8] Fabrication of InGaAsP/InP buried heterostructure on SiO₂/Si substrate by MOVPE growth on InP transferred thin film