[17p-E11-1~15] 15.3 III-V-group epitaxial crystals

▲ [17p-E11-12] Effect of Annealing of GaAs/Al(Ga)As Buffer Layer on the Photoluminescence Intensity of InAs/GaAs Quantum Dots Grown on Ge/Si Substrate by MOCVD

^○（PC）Rajesh Mohan¹, Makoto Miura^2,3, Masao Nishioka¹, Yasuhiko Arakawa¹ (NanoQuine, Tokuo Univ¹, PETRA, Japan², PECST, Japan³)

Keywords:MOCVD,Quantum Dots,Ge/Si substrate