The 61st JSAP Spring Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[17p-E11-1~15] 15.3 III-V-group epitaxial crystals

Mon. Mar 17, 2014 1:30 PM - 5:30 PM E11 (E205)

5:15 PM - 5:30 PM

[17p-E11-15] Effect of crystal growth method on the microstructure of nitrogen-related localized state in GaAsN thin film

○（D）Wen Ding1, Goshi Morioka1, Naoki Fujita1, Akio Suzuki1, Hidetoshi Suzuki1, Atsuhiko Fukuyama1, Masahito Yamaguchi2, Tetso Ikari1 (Univ. of Miyazaki1, Toyota Technological Inst.2)

Keywords:GaAsN,結晶成長方法,局在電子準位