Fabrication and characterization of InAsXSb01-x crystal for narrow band gap device application

Presentation information

Poster presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG6 (G棟2階)

1:30 PM - 3:30 PM

^○Fujikawa Sachie¹, Takagi Yusuke¹, Maeda Takaomi¹, Fujishiro Hiroki¹ (Tokyo Univ. of Science¹)

Keywords:InAsSb