[17a-PG3-1~15] 15.6 IV-group-based compounds

[17a-PG3-12] Impact on I-V Characteristics of Si- and SiC-MOSFETs Caused by Gamma Ray

^○Takashi Yokoseki¹, Kazuya Tanaka¹, Natsuko Fujita², Takahiro Makino², Shinobu Onoda², Takeshi Ohshima², Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata¹ (Saitama Univ.¹, JAEA², Sanken Electric Co., Ltd.³)

Keywords:SiC,ガンマ線,MOSFET