[17a-PG3-1~15] 15.6 IV-group-based compounds

[17a-PG3-9] Identification of Leak Point in SiC Devices Using High Sensitivity IR Thermograph

^○Akihiro Koyama^1,2, Hiroshi Watanabe^1,2, Hidenori Koketsu^1,2, Akemi Nagae^1,2, Takanori Tanaka², Yosuke Nakanishi^1,2, Yu Nakamura², Shuhei Nakata^1,2, Satoshi Yamakawa^1,2 (FUPET¹, Mitsubishi Electric Corp.²)

Keywords:SiC,半導体