Oral presentation

[17p-E5-1~13] 15.6 IV-group-based compounds

Mon. Mar 17, 2014 1:15 PM - 4:45 PM E5 (E105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[17p-E5-1] Effect of epi growth for SORI of 150mm diameter SiC wafer

^○Chiaki Kudou^1,2, Sachiko Ito⁵, Keiko Masumoto^1,5, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Johji Nishio^1,4, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Panasonic², ROHM³, Toshiba⁴, AIST⁵, Hitach⁶)

1:30 PM - 1:45 PM

[17p-E5-2] Validity evaluation of C-face quasi-growth experiments of 4H-SiC by 150mm-diameter wafers

^○Johji Nishio^1,2, Chiaki Kudou^1,3, Sachiko Ito⁴, Keiko Masumoto^1,4, Hirokuni Asamizu^1,5, Kentaro Tamura^1,5, Kazutoshi Kojima^1,4, Toshiyuki Ohno^1,6 (FUPET¹, Toshiba Corp.², Panasonic Corp.³, AIST⁴, ROHM Co., Ltd.⁵, Hitachi, Ltd.⁶)

1:45 PM - 2:00 PM

△ [17p-E5-3] Relationship between growth conditions and stacking fault density in growth of epitaxial layers on 4H-SiC C-face substrates with vicinal off-angle of lower than 1°

^○Keiko Masumoto^1,2, Sachiko Ito^1,2, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Chiaki Kudou^1,4, Johji Nishio^1,5, Kazutoshi Kojima^1,2, Toshiyuki Ohno^1,6, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³, Panasonic⁴, Toshiba⁵, Hitachi⁶)

2:00 PM - 2:15 PM

[17p-E5-4] Measurement of electrical properties for SiC film using THz ellipsometry

^○Takashi Fujii¹, Toshiyuki Iwamoto¹, Yukinori Sato¹, Takeshi Nagashima² (Nippo Precision Co., Ltd.¹, Osaka Univ.²)

2:15 PM - 2:30 PM

[17p-E5-5] Impurity incorporation analysis of SiC during PVT crystal growth

^○Koichi Kakimoto¹, Bing Gao¹, Satoshi Nakano¹, Yoshihiro Kangawa¹, Shin-ichi Nishizawa² (RIAM, Kyushu Univ.¹, AIST²)

2:30 PM - 2:45 PM

▲ [17p-E5-6] Three-dimensional modeling of basal plane dislocations in 4H-SiC single crystal grown by the physical vapor transport method

^○Bing Gao¹, Satoshi Nakano¹, Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹)

2:45 PM - 3:00 PM

▲ [17p-E5-7] Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals

^○Bing Gao¹, Satoshi Nakano¹, Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹)

3:00 PM - 3:15 PM

[17p-E5-8] Crystal growth of p-type SiC by the sublimation method using 2-zone heating system

^○Kazuma Eto^1,2, Satoru Takagi¹, Tomonori Miura^1,2, Tomohisa Kato^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

Break 15:15〜15:30 （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

▲ [17p-E5-9] TSD conversion on C face during solution growth of SiC

^○Shuiyu Xiao¹, Natsumi Hara¹, Shunta Harada¹, Toru Ujihara¹ (Nagoya Univ¹)

3:45 PM - 4:00 PM

[17p-E5-10] Consideration of dislocation conversion during SiC solution growth based on elastic energy

^○Shunta Harada¹, Shiyu Xiao¹, Natsumi Hara¹, Hiroyasu Katsuno¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

4:00 PM - 4:15 PM

[17p-E5-11] Simultaneous real-time observation of bright field and interference images during solution growth of SiC

^○Sakiko Kawanishi¹, Takeshi Yoshikawa¹, Kazuki Morita¹ (The Univ. of Tokyo¹)

4:15 PM - 4:30 PM

△ [17p-E5-12] Behavior of the Threading Screw Dislocation Conversion on Convex Shape in Solution Growth of 4H-SiC

^○Daiki Koike¹, Tomonori Umezaki¹, Atsushi Horio¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

4:30 PM - 4:45 PM

△ [17p-E5-13] Planarization of 6 inch 4H-SiC wafer by using Catalyst-referred etching

^○Ai Isohashi¹, Yasuhisa Sano¹, Takeshi Okamoto¹, Tomohisa Kato², Kazuto Yamauchi¹ (Osaka Univ.¹, AIST²)

Poster presentation

[17a-PG3-1~15] 15.6 IV-group-based compounds

Mon. Mar 17, 2014 9:30 AM - 11:30 AM PG3 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[17a-PG3-1] Evaluation of SiC thin-film generated by solid phase carbonization on Si(111)

^○Tomotaka Hosotani¹, Shota Sanbonsuge², Shun Itou³, Hirokazu Fukidome², Hiroyuki Nagasawa², Maki Suemitsu^2,4 (Tohoku Univ .¹, RIEC², IMR³, JST/CREST⁴)

9:30 AM - 11:30 AM

[17a-PG3-2] Effects of crystal polarity on step bunching behavior of off-axis 4H-SiC solution growth

^○Shota Endo¹, Kazuhito Kamei^1,2, Yutaka Kishida², Koji Moriguchi² (Tohoku Univ. Environmental Studies¹, Nippon Steel Sumitomo Metal²)

9:30 AM - 11:30 AM

△ [17a-PG3-3] Elucidation of the initial oxidation process of 4H-SiC by AR-XPS study

^○Tomoya Sasago¹, Hiroshi Nohira¹ (Tokyo City University¹)

9:30 AM - 11:30 AM

[17a-PG3-4] Impact of sacrificial oxidation to reliability of gate oxide on step bunching

^○Keiichi Yamada¹, Osamu Ishiyama¹, Hideki Sako¹, Junji Senzaki^1,2, Makoto Kitabatake¹ (FUPET¹, AIST²)

9:30 AM - 11:30 AM

[17a-PG3-5] Stabilization of SiO₂/SiC(0001) interface by NF₃ added Oxidation

^○（M1）Masahito Nagoshi¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (University of Tsukuba¹)

9:30 AM - 11:30 AM

▲ [17a-PG3-6] Impact of the atomic-step finishing by CMP on the wettability of SiC substrates

^○Gemma Rius¹, Yuji Hirose¹, Yayoi Tanaka¹, Osamu Eryu¹ (Nagoya Institute of Tecnology¹)

9:30 AM - 11:30 AM

[17a-PG3-7] Molecular Dynamics study on oxidation processes on 4H-SiC(0001) and (000-1) surfaces

^○（PC）Hiroshi Koyama^1,2, Takahiro Yamasaki^1,2, Jun Nara^1,2, Tatsuo Schimizu³, Takahisa Ohno^1,2,4 (NIMS¹, MARCEED², Toshiba³, IIS Univ. Tokyo⁴)

9:30 AM - 11:30 AM

[17a-PG3-8] Relations between Surface Morphology and Dislocations of SiC Crystal

^○Yoshihisa Orai¹, Syunya Watanabe¹, Takahiro Sato¹, Toshiyuki Issiki², Munetoshi Fukui¹ (Hitachi High-Tech¹, Kyoto Institute of Technology²)

9:30 AM - 11:30 AM

[17a-PG3-9] Identification of Leak Point in SiC Devices Using High Sensitivity IR Thermograph

^○Akihiro Koyama^1,2, Hiroshi Watanabe^1,2, Hidenori Koketsu^1,2, Akemi Nagae^1,2, Takanori Tanaka², Yosuke Nakanishi^1,2, Yu Nakamura², Shuhei Nakata^1,2, Satoshi Yamakawa^1,2 (FUPET¹, Mitsubishi Electric Corp.²)

9:30 AM - 11:30 AM

[17a-PG3-10] Investigation of Channel Mobility on SiC Trench MOSFETs

^○Katsuhiro Kutsuki¹, Sachiko Kawaji¹, Yukihiko Watanabe¹, Shin-ichiro Miyahara², Jun Saito³ (TOYOTA CENTRAL R&D LABS., INC.¹, Research Laboratories DENSO CORPORATION², TOYOTA MOTOR CORPORATION³)

9:30 AM - 11:30 AM

[17a-PG3-11] Gamma Ray Irradiation Dose Dependence of Electrical Characterizations of SiC-MOS Capacitors

^○Kazuya Tanaka¹, Takashi Yokoseki¹, Natsuko Fujita², Takahiro Makino², Shinobu Onoda², Takeshi Ohshima², Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata¹ (Saitama Univ.¹, JAEA², Sanken Electric Co., Ltd.³)

9:30 AM - 11:30 AM

[17a-PG3-12] Impact on I-V Characteristics of Si- and SiC-MOSFETs Caused by Gamma Ray

^○Takashi Yokoseki¹, Kazuya Tanaka¹, Natsuko Fujita², Takahiro Makino², Shinobu Onoda², Takeshi Ohshima², Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata¹ (Saitama Univ.¹, JAEA², Sanken Electric Co., Ltd.³)

9:30 AM - 11:30 AM

[17a-PG3-13] Si- and C-face femtosecond laser irradiation onto double-sided polished 6H-SiC.

^○Reina Miyagawa¹, Osamu Eryu¹ (Nagoya Inst. of Tech.¹)

9:30 AM - 11:30 AM

[17a-PG3-14] Establishment of Ohmic Contact Formation by Laser Annealing

^○Takaaki Tominaga¹, Hiroaki Okabe¹, Yosuke Nakanishi¹, Kazuyuki Sugahara¹, Nobuyuki Tomita¹, Satoshi Yamakawa¹ (Mitsubishi Electric Corp.¹)

9:30 AM - 11:30 AM

[17a-PG3-15] High-speed Dicing of SiC Wafers by Ultra Short Pulse Laser

^○Akira Nakajima¹, Yosuke Tateishi³, Hiroshi Murakami¹, Hidetomo Takahashi³, Michiharu Ota³, Ryouji Kosugi², Takeshi Mitani², Shin-ichi Nishizawa¹, Hiromichi Ohashi¹ (ETRI AIST¹, ADPERC AIST², Aisin Seiki³)

Oral presentation

[18a-E5-1~8] 15.6 IV-group-based compounds

Tue. Mar 18, 2014 9:30 AM - 11:45 AM E5 (E105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[18a-E5-1] Comprehensive understanding of 4H-SiC surface oxidation reaction mechanisms at various conditions

^○Koji Kita^1,2, Richard Heihachiro Kikuchi¹, Hirohisa Hirai¹ (Univ. of Tokyo¹, JST-PRESTO²)

9:45 AM - 10:00 AM

△ [18a-E5-2] Reduction of interface state density at 4H-SiC(0001) MOS interface by thermodynamic and kinetic approach

^○Richard Heihachiro Kikuchi¹, Koji Kita^1,2 (Univ. of Tokyo¹, JST-PRESTO²)

10:00 AM - 10:15 AM

△ [18a-E5-3] Difference of SiO2/4H-SiC C-face interface structures grown in various wet-oxidation ambient

^○Hirohisa Hirai¹, Koji Kita^1,2 (The Univ. of Tokyo¹, JST-PRESTO²)

10:15 AM - 10:30 AM

[18a-E5-4] Behavior of Carbon Atoms on a Concave Formed by Electrical Breakdown of SiC MOS Capacitors with Thermally Grown Oxide

^○Soshi Sato¹, Yuki Hiroi³, Kikuo Yamabe³, Makoto Kitabatake⁴, Tetsuo Endo^1,2, Masaaki Niwa¹ (CIES, Tohoku Univ.¹, School of Eng., Tohoku Univ.², Inst. of Applied Physics, Univ. of Tsukuba³, FUPET⁴)

10:30 AM - 10:45 AM

△ [18a-E5-5] Comparison of characteristics of lateral MOSFETs fabricated on 4H-SiC (11-20) and (1-100) faces

^○Keiko Ariyoshi^1,2, Shinsuke Harada^1,3, Junji Senzaki^1,3, Takahito Kojima^1,4, Yusuke Kobayashi^1,4, Yasunori Tanaka^1,3, Ryosuke Iijima², Takashi Shinohe^1,2 (FUPET¹, Toshiba Corp.², AIST³, Fuji Electric Co.,Ltd⁴)

Break 10:45〜11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[18a-E5-6] The influence of XY resolution to optical microscopy on SiC substrate surface

^○Kentaro Tamura^1,3, Hideki Sako^1,4, Masayuki Sasaki^1,5, Tamotu Yamashita^1,6, Hirokuni Asamizu^1,3, Sachiko Ito², Kazutoshi Kojima^1,2, Masatake Nagaya^1,7, Takanori Kido^1,6, Makoto Kitabatake^1,8, Kenji Kawata^1,2, Tomohisa Kato^1,2 (FUPET¹, AIST², Rohm³, Toray Research Center⁴, NSSMC⁵, Showa Denko⁶, Denso⁷, Panasonic⁸)

11:15 AM - 11:30 AM

[18a-E5-7] Study on formation of dislocation contrast in 4H-SiC wafer in mirror projection electron microscopy image

^○Toshiyuki Isshiki¹, Masaki Hasegawa² (Kyoto Inst. Tech.¹, Hitachi, Central Research Lab.²)

11:30 AM - 11:45 AM

[18a-E5-8] Three-dimensional imaging of threading dislocations in 4H-SiC by two-photon-excited photoluminescence

^○Ryohei Tanuma¹, Hidekazu Tsuchida¹ (CRIEPI¹)

Oral presentation

[18p-E5-1~11] 15.6 IV-group-based compounds

Tue. Mar 18, 2014 1:15 PM - 4:15 PM E5 (E105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

△ [18p-E5-1] Temperature Dependence of High-Current-Gain 4H-SiC(000-1) BJT

^○Satoshi Asada¹, Takafumi Okuda², Tsunenobu Kimoto², Jun Suda² (Kyoto Univ.¹, Dept. of Electron. Sci. & Eng., Kyoto Univ.²)

1:30 PM - 1:45 PM

[18p-E5-2] Carrier mobility model for SiC-MOSFETs including Coulomb scattering by interface traps

^○Hiroki Noguchi¹, Eiichi Murakami¹, Yuu Sonoda¹ (Kyusyu Sangyo University¹)

1:45 PM - 2:00 PM

[18p-E5-3] Effect of thermal process on the interface of n-Si/n-4H-SiC heterojunctions

^○Jianbo Liang¹, Mnabu Arai², Syouta Nisida¹, Masasi Morimoto¹, Naoteru Shigekawa¹ (Osaka City University¹, New Japan Radio Co., Ltd²)

2:00 PM - 2:15 PM

△ [18p-E5-4] Annealing Characteristics of p+-Si/n-4H-SiC Junctions by Using Surface-Activated Bonding

^○（M1）Shota Nishida¹, Jianbo Liang¹, Tomohiro Hayashi¹, Masashi Morimoto¹, Naoteru Shigekawa¹, Manabu Arai² (Osaka City Univ.¹, New Japan Radio Co., Ltd.²)

2:15 PM - 2:30 PM

[18p-E5-5] Long-term stability of a commercially available SiC MOSFET

^○Masashi Minami¹ (PHNITEC¹)

2:30 PM - 2:45 PM

△ [18p-E5-6] Surface Morphologies of 4H-SiC Polar and Non-polar Substrates Treated by H₂-gas Etching

^○Takahiro Higashi¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (Kyoto Univ.¹)

Break 14:45〜15:00 （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

△ [18p-E5-7] Relaxation behavior of threshold voltage shift under gate bias stress and suggestion of advanced measurement method

^○Mitsuru Sometani¹, Dai Okamoto¹, Shinsuke Harada¹, Hitoshi Ishimori¹, Shinji Takasu¹, Tetsuo Hatakeyama¹, Manabu Takei², Kazutoshi Kojima¹, Yoshiyuki Yonezawa¹, Kenji Fukuda¹, hajime Okumura¹ (AIST ADPERC¹, Fuji Electric²)

3:15 PM - 3:30 PM

△ [18p-E5-8] Characterization of interface states in SiC(11\overline{2}0) and (1\overline{1}00) MOS structures

^○Seiya Nakazawa¹, Takafumi Okuda¹, Takashi Nakamura², Tsunenobu Kimoto¹ (Kyoto Univ.¹, Rohm Co. Ltd.²)

3:30 PM - 3:45 PM

[18p-E5-9] Deep levels near the valence band in p-type 4H-SiC

^○Hiroki Nakane¹, Masashi Kato¹, Masaya Ichimura¹ (Nagoya Institute of Technology¹)

3:45 PM - 4:00 PM

[18p-E5-10] Evaluation of temperature dependence of surface recombination velocities in 4H-SiC

^○Kimihiro Kohama¹, Yuto Mori¹, Masashi Kato¹, Masaya Ichimura¹ (Nagoya Inst. of Tech¹)

4:00 PM - 4:15 PM

[18p-E5-11] Water splitting reaction on 4H-SiC surface: A first-principles analysis

Ryo Matsuoka¹, ^○Tsuruta Kenji¹, Kazuo Shinike¹ (Okayama Univ.¹)

Sessions

15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-E5-1~13] 15.6 IV-group-based compounds

△ [17p-E5-3] Relationship between growth conditions and stacking fault density in growth of epitaxial layers on 4H-SiC C-face substrates with vicinal off-angle of lower than 1°

▲ [17p-E5-6] Three-dimensional modeling of basal plane dislocations in 4H-SiC single crystal grown by the physical vapor transport method

▲ [17p-E5-7] Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals

▲ [17p-E5-9] TSD conversion on C face during solution growth of SiC

△ [17p-E5-12] Behavior of the Threading Screw Dislocation Conversion on Convex Shape in Solution Growth of 4H-SiC

△ [17p-E5-13] Planarization of 6 inch 4H-SiC wafer by using Catalyst-referred etching

[17a-PG3-1~15] 15.6 IV-group-based compounds

△ [17a-PG3-3] Elucidation of the initial oxidation process of 4H-SiC by AR-XPS study

▲ [17a-PG3-6] Impact of the atomic-step finishing by CMP on the wettability of SiC substrates

[18a-E5-1~8] 15.6 IV-group-based compounds

△ [18a-E5-2] Reduction of interface state density at 4H-SiC(0001) MOS interface by thermodynamic and kinetic approach

△ [18a-E5-3] Difference of SiO2/4H-SiC C-face interface structures grown in various wet-oxidation ambient

△ [18a-E5-5] Comparison of characteristics of lateral MOSFETs fabricated on 4H-SiC (11-20) and (1-100) faces

[18p-E5-1~11] 15.6 IV-group-based compounds

△ [18p-E5-1] Temperature Dependence of High-Current-Gain 4H-SiC(000-1) BJT

△ [18p-E5-4] Annealing Characteristics of p+-Si/n-4H-SiC Junctions by Using Surface-Activated Bonding

△ [18p-E5-6] Surface Morphologies of 4H-SiC Polar and Non-polar Substrates Treated by H2-gas Etching

△ [18p-E5-7] Relaxation behavior of threshold voltage shift under gate bias stress and suggestion of advanced measurement method

△ [18p-E5-8] Characterization of interface states in SiC(11\overline{2}0) and (1\overline{1}00) MOS structures

△ [18p-E5-6] Surface Morphologies of 4H-SiC Polar and Non-polar Substrates Treated by H₂-gas Etching