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15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-E5-1~13] 15.6 IV-group-based compounds

Mon. Mar 17, 2014 1:15 PM - 4:45 PM E5 (E105)

2:30 PM - 2:45 PM

▲ [17p-E5-6] Three-dimensional modeling of basal plane dislocations in 4H-SiC single crystal grown by the physical vapor transport method

^○Bing Gao¹, Satoshi Nakano¹, Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹)

Keywords:SiC