The 61st JSAP Spring Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-E5-1~13] 15.6 IV-group-based compounds

Mon. Mar 17, 2014 1:15 PM - 4:45 PM E5 (E105)

2:15 PM - 2:30 PM

[17p-E5-5] Impurity incorporation analysis of SiC during PVT crystal growth

○Koichi Kakimoto1, Bing Gao1, Satoshi Nakano1, Yoshihiro Kangawa1, Shin-ichi Nishizawa2 (RIAM, Kyushu Univ.1, AIST2)

Keywords:シリコンカーバイド,昇華法