[18a-E5-1~8] 15.6 IV-group-based compounds

[18a-E5-4] Behavior of Carbon Atoms on a Concave Formed by Electrical Breakdown of SiC MOS Capacitors with Thermally Grown Oxide

^○Soshi Sato¹, Yuki Hiroi³, Kikuo Yamabe³, Makoto Kitabatake⁴, Tetsuo Endo^1,2, Masaaki Niwa¹ (CIES, Tohoku Univ.¹, School of Eng., Tohoku Univ.², Inst. of Applied Physics, Univ. of Tsukuba³, FUPET⁴)

Keywords:SiC,絶縁破壊,炭素