[18a-E5-1~8] 15.6 IV-group-based compounds

△ [18a-E5-5] Comparison of characteristics of lateral MOSFETs fabricated on 4H-SiC (11-20) and (1-100) faces

^○Keiko Ariyoshi^1,2, Shinsuke Harada^1,3, Junji Senzaki^1,3, Takahito Kojima^1,4, Yusuke Kobayashi^1,4, Yasunori Tanaka^1,3, Ryosuke Iijima², Takashi Shinohe^1,2 (FUPET¹, Toshiba Corp.², AIST³, Fuji Electric Co.,Ltd⁴)

Keywords:SiC,MOSFET,ゲート絶縁膜