[18a-E5-1~8] 15.6 IV-group-based compounds

△ [18a-E5-3] Difference of SiO2/4H-SiC C-face interface structures grown in various wet-oxidation ambient

^○Hirohisa Hirai¹, Koji Kita^1,2 (The Univ. of Tokyo¹, JST-PRESTO²)

Keywords:SiC,熱酸化膜,FTIR