[18p-E5-1~11] 15.6 IV-group-based compounds

△ [18p-E5-7] Relaxation behavior of threshold voltage shift under gate bias stress and suggestion of advanced measurement method

^○Mitsuru Sometani¹, Dai Okamoto¹, Shinsuke Harada¹, Hitoshi Ishimori¹, Shinji Takasu¹, Tetsuo Hatakeyama¹, Manabu Takei², Kazutoshi Kojima¹, Yoshiyuki Yonezawa¹, Kenji Fukuda¹, hajime Okumura¹ (AIST ADPERC¹, Fuji Electric²)

Keywords:SiC,信頼性,しきい値電圧