Consideration of dislocation conversion during SiC solution growth based on elastic energy

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Mon. Mar 17, 2014 1:15 PM - 4:45 PM E5 (E105)

3:45 PM - 4:00 PM

^○Shunta Harada¹, Shiyu Xiao¹, Natsumi Hara¹, Hiroyasu Katsuno¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

Keywords:SiC