The 61st JSAP Spring Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[18p-E5-1~11] 15.6 IV-group-based compounds

Tue. Mar 18, 2014 1:15 PM - 4:15 PM E5 (E105)

2:00 PM - 2:15 PM

△ [18p-E5-4] Annealing Characteristics of p+-Si/n-4H-SiC Junctions by Using Surface-Activated Bonding

○（M1）Shota Nishida1, Jianbo Liang1, Tomohiro Hayashi1, Masashi Morimoto1, Naoteru Shigekawa1, Manabu Arai2 (Osaka City Univ.1, New Japan Radio Co., Ltd.2)

Keywords:表面活性化ボンディング法,SiC,アニール