[18p-E5-1~11] 15.6 IV-group-based compounds

[18p-E5-3] Effect of thermal process on the interface of n-Si/n-4H-SiC heterojunctions

^○Jianbo Liang¹, Mnabu Arai², Syouta Nisida¹, Masasi Morimoto¹, Naoteru Shigekawa¹ (Osaka City University¹, New Japan Radio Co., Ltd²)

Keywords:表面活性化ボンディング