[17p-E5-1~13] 15.6 IV-group-based compounds

[17p-E5-8] Crystal growth of p-type SiC by the sublimation method using 2-zone heating system

^○Kazuma Eto^1,2, Satoru Takagi¹, Tomonori Miura^1,2, Tomohisa Kato^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

Keywords:SiC,結晶成長