[17p-E13-1~18] 15.4 III-V-group nitride crystals

▲ [17p-E13-1] Phase separation of MOVPE-grown thick (〜1 µm) InxGa1-xN (x〜0.3) (I): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN

^○Md.Tanvir Hasan^1,2, Akihiro Mihara^1,2, Norihiko Narita³, Naoteru Shigekawa⁴, Akio Yamamoto^1,2 (Univ. of Fukui¹, JST-CREST², The Kansai Electric Power Co.³, Osaka City Univ.⁴)

Keywords:InGaN,Phase separation,MOVPE