[17p-E13-1~18] 15.4 III-V族窒化物結晶

▲ [17p-E13-1] Phase separation of MOVPE-grown thick (〜1 µm) In_xGa_1-xN (x〜0.3)(I): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN

^○Md.tanvir Hasan^1,2，三原章宏^1,2，成田憲彦³，重川直輝⁴，山本暠勇^1,2 (福井大院工¹，JST-CREST²，関西電力³，大阪市大院工⁴)

キーワード：InGaN,Phase separation,MOVPE