[17p-PG2-1~23] 6.3 Oxide-based electronics

[17p-PG2-17] Resistivity dependence of Monoclinic Thin Tungsten Oxide Film on Annealing Processes

^○Wei Li¹, Akito Sasaki³, Hideyuki Oozu³, Katsuaki Aoki³, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech IGSSE², Toshiba Material Co., LTD³)

Keywords:WO₃,薄膜,抵抗率