Fabrication of InGaAsP/InP buried heterostructure on SiO<sub>2</sub>/Si substrate by MOVPE growth on InP transferred thin film

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Tue. Mar 18, 2014 9:30 AM - 11:45 AM E11 (E205)

11:30 AM - 11:45 AM

^○Takuro Fujii¹, Tomonari Sato¹, Koji Takeda¹, Koichi Hasebe¹, Takaaki Kakitsuka¹, Shinji Matsuo¹ (NTT Photonics Labs.¹)

Keywords:エピタキシャル成長,直接接合,シリコンフォトニクス