Drastic reduction in surface recombination velocity of Cat-CVD SiN<sub>x</sub>/c-Si structures by phosphorus (P) Cat-doping

Presentation information

Oral presentation

16. Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E12 (E206)

9:45 AM - 10:00 AM

^○（D）チャムチートリン^1,2, 小山小市^1,2, 大平圭介^1,2, 松村英樹^1,2 (JAIST¹, JST CREST²)

Keywords:Phosphorus Cat-doping,Surface recombination velocity,Application of Cat-CVD for passivation