Poster presentation

[17a-PA4-1~18] 16.3 Bulk, thin-film and other silicon-based solar cells

Mon. Mar 17, 2014 9:30 AM - 11:30 AM PA4 (アリーナ)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

▲ [17a-PA4-1] Grain Evolution in Multicrystalline Silicon Grown from Small Randomly Oriented Seeds

^○Ronit Prakash^1,2, Yoshiji Miyamura¹, Jun Chen¹, Karolin Jiptner¹, Jiangyong Li³, Hirofumi Harada¹, Takashi Sekiguchi^1,2 (NIMS¹, Tsukuba Univ.², Meiji Univ.³)

9:30 AM - 11:30 AM

[17a-PA4-2] Effects on grain boundaries interfacial structure on impurities distribution on recombination activity in multicrystalline silicon

^○（D）Takuto Kojima¹, Tomihisa Tachibana¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Koji Arafune², Atsushi Ogura³, Masafumi Yamaguchi¹ (Toyota Tech. Inst.¹, Univ. of Hyogo², Meiji Univ.³)

9:30 AM - 11:30 AM

[17a-PA4-3] Characterization of Silicon Solar Cells Using Laser Terahertz Emission Microscope under CW Laser Illumination - CW Laser Wavelength Dependence -

^○Akira Ito¹, Hidetoshi Nakanishi¹, Kazuhisa Takayama², Iwao Kawayama², Hironaru Murakami², Masayoshi Tonouchi² (Dainippon Screen Mfg.¹, ILE Osaka Univ.²)

9:30 AM - 11:30 AM

[17a-PA4-4] Research on fabrication technology of Si solar cell with sputter method

^○（M1）Sohei Fujimura¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric. & Technol.¹)

9:30 AM - 11:30 AM

[17a-PA4-5] Influence of Low-Temperature Doping on Minority Carrier Lifetime in a-Si/c-Si Hetero-Junction Diodes

^○Shogo Tsuzaki^1,2, Koichi Koyama^1,2, Keisuke Ohdaira^1,2, Hideki Matsumura^1,2 (JAIST¹, JST CREST²)

9:30 AM - 11:30 AM

△ [17a-PA4-6] Gas phase diagnostics of PEDOT:PSS mist transport and morphology on textured Si

^○Hiromitsu Sugawara¹, Naoto Miyauchi¹, Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (Saitama Univ.¹)

9:30 AM - 11:30 AM

△ [17a-PA4-7] 2D mapping of photovoltaic performance of c-Si/PEDOT:PSS heterojunction solar cells

^○Tatsuya Ohki¹, Naoto Miyauchi¹, Hiromitsu Sugawara¹, Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (Saitama Univ.¹)

9:30 AM - 11:30 AM

▲ [17a-PA4-8] 2D map of photovoltaic parameters in c-Si/PEDOT:PSS heterojunction solar cells

^○Qiming Liu¹, Tatsuya Ohki¹, Takayuki Kakinuma¹, Khatri Ishwor¹, Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (Saitama Univ.¹)

9:30 AM - 11:30 AM

[17a-PA4-9] Evaluation of SiO₂ Passivation Property on Silicon Surface Using Liquid Source Material

^○Chihiro Hagiwara¹, Hiroaki Sakakibara¹, hiroshi Nagayoshi¹ (TokyoNCT¹)

9:30 AM - 11:30 AM

[17a-PA4-10] Passivation quality of AlO_x film deposited by sputtering method

^○Keigo Ueda¹, Haruhiko Yoshida^1,3, Koji Arafune^1,3, Atsushi Ogura^2,3, Shin-ichi Satoh^1,3 (Univ. of Hyogo¹, Meiji Univ.², JST-CREST³)

9:30 AM - 11:30 AM

[17a-PA4-11] Production of the back passivation silicon solar cell using an alumina thin film

^○（M1）Takuma Noguchi¹, Abdullah Uzum¹, Hiroyuki Kanda¹, Seigo Ito¹ (Univ. of Hyogo¹)

9:30 AM - 11:30 AM

[17a-PA4-12] Fabrication of Aluminum Paste for Silicon Solar Cells using Polyvinyl Alcohol

^○Taiki Ashikaga¹, Takuma Noguchi¹, Toshifumi Matsuoka², Abdullah Uzum¹, Seigo Ito¹, Thoru Nakanishi³ (Univ. of Hyogo¹, Japan Vam & Poval co. ltd.², Shin-Etsu Chemical co. ltd.³)

9:30 AM - 11:30 AM

[17a-PA4-13] Preparation of c-Si Solar Cells using ARC Layer by Colloidal Nano Oxides

^○Kuriyama Masashi¹, Norihisa Harano¹, Abdullah Uzum¹, Yutaka Kimura², Kenji Tanimoto², Seigo Ito¹ (Univ. of Hyogo¹, Nissan Chemical Inds, ltd.²)

9:30 AM - 11:30 AM

[17a-PA4-14] Improvement in light-scattering property of TCO substrates by metal oxide nanoparticle layer

^○Shuhei Miura¹, Masaki Tashiro¹, Kazutoshi Suzuki¹, Shinichi Noda¹, Shuichi Nonomura¹ (Gifu Univ.¹)

9:30 AM - 11:30 AM

[17a-PA4-15] Fabrication of Overdoze of hydrogen to a-Si:H Film by “Ion Beam Assist Method”

^○Kazuki Miyama¹, Justin Ndagijimana¹, Seiya Matsukawa¹, Hiroshi Kubota¹, Masao Yoshioka², Satoshi Yokoyama² (Graduate school of Science and Technology Kumamoto Univ.¹, Faculty of Technology Kumamoto Univ.²)

9:30 AM - 11:30 AM

[17a-PA4-16] Rapid thermal annealing effects on the Si/SiO2 multilayer films deposited by ultrahigh vacuum radio frequency magnetron sputtering

Minoru Kondo¹, ^○Toshio takeuchi¹, Atsushi Kawaharazuka¹, Yoshiji Horikoshi¹ (Waseda University¹)

9:30 AM - 11:30 AM

[17a-PA4-17] Proposal of junction formation process for solar cells made of silicon microstructures

^○Yuma Ito¹, Hayato Hori¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Akira Nishiyama¹, Nobuyuki Sugii¹, Kenji Natori², Hiroshi Iwai² (Tokyo Tech. IGSSE¹, Tokyo Tech. FRC²)

9:30 AM - 11:30 AM

[17a-PA4-18] A Study on Interface State Density at Si Nanowire and SiO₂ Interfaces

^○Tomoya Shoji¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Oral presentation

[18a-E12-1~10] 16.3 Bulk, thin-film and other silicon-based solar cells

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E12 (E206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-E12-1] Improvement of n-type nc-3C-SiC:H heterojunction emitter for c-Si solar cells

^○Kazuki Shimizu¹, Eric Ateto¹, Shinsuke Miyajima¹, Makoto Konagai^1,2 (Graduate School, Tokyo Tech.¹, PVREC, Tokyo Tech.²)

9:15 AM - 9:30 AM

△ [18a-E12-2] Reduction of the interface SiH₂ content for suppression of the interface recombination in a-Si:H/c-Si heterojunction solar cells

^○Kohei Usami¹, Hiroyuki Fujiwara¹ (Gifu Univ.¹)

9:30 AM - 9:45 AM

[18a-E12-3] Improvement in Cat-CVD a-Si/c-Si hetero-junction interface by surface oxidation

^○Takafumi Oikawa¹, Keisuke Ohdaira^{1, 2}, Hideki Matsumura^{1, 2} (JAIST¹, JST CREST²)

9:45 AM - 10:00 AM

▼ [18a-E12-4] Drastic reduction in surface recombination velocity of Cat-CVD SiN_x/c-Si structures by phosphorus (P) Cat-doping

^○（D）チャムチートリン^1,2, 小山小市^1,2, 大平圭介^1,2, 松村英樹^1,2 (JAIST¹, JST CREST²)

10:00 AM - 10:15 AM

[18a-E12-5] Influence of O₃ on the properties of AlO_x passivation film grown by mist CVD

^○Takayuki Uchida¹, Toshiyuki Kawaharamura², Kenji Shibayama¹, Shizuo Fujita¹, Takahiro Hiramatsu³, Hiroyuki Orita³ (Graduate School of Eng., Kyoto Univ.¹, Inst. for Nanotechnology, Kochi Univ. of Tech.², TMEIC³)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [18a-E12-6] Study of Stacking Surface Passivation Structure for Crystalline Si Solar Cells

^○Takaaki Katsumata^1,2,4, Norihiro Ikeno¹, Shinichi Satoh^3,4, Haruhiko Yoshida^3,4, Koji Arafune^3,4, Toyohiro Chikyow^2,4, Atsushi Ogura^1,4 (Meiji Univ.¹, NIMS², Univ. of Hyogo³, JST-CREST⁴)

10:45 AM - 11:00 AM

[18a-E12-7] A factor to determine charge density and its polarity in alumina passivation films for Si solar cells

^○Masato Yagi¹, Yoh-Ichiro Ogita¹ (Kanagawa Institute of Technology¹)

11:00 AM - 11:15 AM

[18a-E12-8] Correlation between fixed charge and chemical composition for Sr_xSiO_x+2 layers

^○（M1）Shota Taniwaki¹, Yuki Toyoshima¹, Yasushi Hotta^1,3, Haruhiko Yoshida^1,3, Koji Arafune^1,3, Atsushi Ogura^2,3, Shin-ichi Satoh^1,3 (Univ. of Hyogo¹, Meiji Univ.², JST-CREST³)

11:15 AM - 11:30 AM

△ [18a-E12-9] Passivation of Si surfaces by using nitric acid oxidation of silicon (NAOS) method and improvement of crystalline silicon solar cell characteristics.

^○Ryo Hirose^1,2, Taketoshi Matsumoto^1,2, Hikaru Kobayashi^1,2 (ISIR, Osaka Univ.¹, CREST-JST²)

11:30 AM - 11:45 AM

▲ [18a-E12-10] Oxygen Radical Treatment used for Fabricating Metal-Insulator-Semiconductor Solar Cells

^○（B）Satoshi Shigeno¹, Shinya Yoshidomi¹, Masahiko Hasumi¹, Toshiyuki Sameshima¹ (TUAT¹)

Oral presentation

[18p-E12-1~21] 16.3 Bulk, thin-film and other silicon-based solar cells

Tue. Mar 18, 2014 1:15 PM - 7:00 PM E12 (E206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[18p-E12-1] Basic Studies on Microcrystalline-Silicon Solar Cells with Photonic-Crystal Structures

^○Kenji Ishizaki¹, Menaka De Zoysa¹, Yoshinori Tanaka¹, Takami Umeda¹, Yosuke Kawamoto¹, Shoya Fujita¹, Hiroaki Shigeta^1,2, Masayuki Fujita^1,3, Susumu Noda¹ (Kyoto Univ.¹, SHARP², Osaka Univ.³)

1:30 PM - 1:45 PM

[18p-E12-2] Thin-film silicon solar cells on glass superstrates with periodic textures

^○Hitoshi Sai¹, Keigou Maejima², Takuya Matsui¹, Takashi Koida¹, Isao Yoshida², Michio Kondo¹ (AIST¹, PVTEC²)

1:45 PM - 2:00 PM

[18p-E12-3] Enhanced light absorption in thin-film Si solar cells using moth-eye anti-reflection films

^○Hitoshi Sai¹, Takuya Matsui¹, Takashi Koida¹, Kimihiko Saito³, Isao Yoshida², Michio Kondo¹ (AIST¹, PVTEC², Fukushima Univ.³)

2:00 PM - 2:15 PM

[18p-E12-4] Fabrication of high haze transparent conductive oxide substrates with smooth surface by metal oxide nanoparticle layer

^○Kazutoshi Suzuki¹, Shuhei Miura¹, Masaki Tashiro¹, Shinichi Noda¹, Shuichi Nonomura¹ (Gifu Univ.¹)

2:15 PM - 2:30 PM

[18p-E12-5] Development of Separated-Function type Textured ZnO Substrate

^○Hirotaka Katayama¹, Shigeo Yata¹, Akira Terakawa¹ (Panasonic Corp.¹)

2:30 PM - 2:45 PM

[18p-E12-6] Enhanced photocarrier generation in photonic nanostructures fabricated from vertically aligned Ge quantum dots for high-efficiency silicon-based solar cells

^○Takeshi Tayagaki¹, Yusuke Hoshi², Yuko Kishimoto¹, Noritaka Usami² (Kyoto Univ.¹, Nagoya Univ.²)

2:45 PM - 3:00 PM

[18p-E12-7] Fabrication Technology of Si Nano-wall for Tandem Solar Cells

^○Hiroshi Tomizawa¹, Yuki Sakonji¹, Yukimi Ichikawa¹, Makoto Konagai^1,2 (JST¹, Tokyo Tech.²)

Break 15:00〜15:15 （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[18p-E12-8] Diameter Reduction of Silicon Nanowire Arrays by Ozone Oxidation

^○（B）Eiichi Ishida¹, Yasuharu Yamada², Shinya Kato⁵, Yasuyoshi Kurokawa^2,4, Akira Yamada^2,3 (Dept. of Electrical and Electronic Engineering, Tokyo Tech¹, Dept. of Physical Electronics, Tokyo Tech², PVREC, Tokyo Tech³, JST-PRESTO⁴, JST-FUTURE-PV⁵)

3:30 PM - 3:45 PM

△ [18p-E12-9] Minority Carrier Lifetime of polycrystalline silicon nanowires

^○Shinya Kato¹, Tatsuya Yamazaki², Shinsuke Miyajima², Makoto Konagai^1,2 (Japan Science and Technology Agency¹, Graduate School of Science and Engineering, Tokyo tech.²)

3:45 PM - 4:00 PM

▲ [18p-E12-10] A Simple Alternative of Barrier Layer Removal of Nanoporous Alumina Template on Silicon Substrate

^○（P）Hoang NguyenVan^{1, 2}, Yusuke Hoshi¹, Noritaka Usami^1,2 (Nagoya University¹, Japan Science and Technology Agency²)

4:00 PM - 4:15 PM

[18p-E12-11] Photovoltaic Properties of SiNW Solar Cells with Wire-Shaped PN Junction.

^○Daiji Kanematsu^1,2, Shigeo Yata¹, Akira Terakawa¹, Makoto Tanaka¹, Makoto Konagai² (Panasonic Corp.¹, Tokyo Tech.²)

4:15 PM - 4:30 PM

[18p-E12-12] Photovoltaic characteristic of silicon nanoparticles

^○（B）Keiya Yamanobe¹, Ryoko Suzuki¹, Keisuke Sato¹, Naoki Fukata², Kenji Hirakuri¹ (Toden Univ.¹, NIMS²)

4:30 PM - 4:45 PM

[18p-E12-13] Waveguide-coupled Multi-striped Orthogonal Photon-Photocarrier Propagation Solar Cells

^○Akira Ishibashi¹, Tsuyoshi Kasai¹, Kenji Kondo¹, Hideo Kaiju¹, Tomoya Taniguchi¹ (RIES, Hokkaido Univ.¹)

4:45 PM - 5:00 PM

▲ [18p-E12-14] Photoelectrical characterization of organically surface-modified nanocrystalline silicon membrane cells

^○（PC）Romain Mentek¹, Bernard Gelloz², Daihei Hippo¹, Nobuyoshi Koshida¹ (Tokyo Univ. of Agri. & Tech.¹, Nagoya Univ.²)

Break 17:00〜17:15 （5:00 PM - 5:15 PM）

5:15 PM - 5:30 PM

[18p-E12-15] The effect of inserting a-Si:H for c-Si/PEDOT:PSS heterojunction solar cells

^○Kyohei Watanabe¹, Qiming Liu¹, Ishwor Khatri¹, Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (Saitama Univ.¹)

5:30 PM - 5:45 PM

△ [18p-E12-16] Fabrication of amorphous silicon-based semiconductors with low SiH₂ contents by Mg introduction

^○Takumi Itoh¹, Takemasa Fujiseki¹, Hiroyuki Fujiwara¹ (Gifu Univ.¹)

5:45 PM - 6:00 PM

▲ [18p-E12-17] Formation of a-Si:H films from cyclopentasilane by using parallel deposition system at atmospheric pressure

^○Zhongrong Shen^1,2, Takashi Masuda^1,3, Hideyuki Takagishi^1,2, Keisuke Ohdaira^1,2,3, Tatsuya Shimoda^1,2,3 (JAIST¹, JST-ALCA², JAIST GDRC³)

6:00 PM - 6:15 PM

[18p-E12-18] Study of substrate temperature characteristic in a-Si:H, a-SiO:H, a-SiC:H

^○Yasushi Sobajima^1,2, Yoshihiko Kitani¹, Kan Tanaka¹, Takahiro Yada¹, Chitose Sada^1,2, Akihisa Matsuda^1,2, Hiroaki Okamoto^1,2 (Grad. School of Eng. Sci., Osaka Univ.¹, JST-CREST²)

6:15 PM - 6:30 PM

△ [18p-E12-19] Study of Growth Mechanism of a-Si_1-xC_x:H during Plasma-Enhanced Chemical Vapor Deposition using Quantum Chemical Molecular Dynamics Method

^○（D）Takuya Kuwahara¹, Hiroshi Ito¹, Yuji Higuchi¹, Nobuki Ozawa¹, Momoji Kubo¹ (Tohoku Univ.¹)

6:30 PM - 6:45 PM

▲ [18p-E12-20] Defect analysis of amorphous silicon solar cells by Fourier transform photocurrent spectroscopy

^○Adrien Bidiville¹, Takuya Matsui¹ (AIST¹)

6:45 PM - 7:00 PM

△ [18p-E12-21] Silicon Thin-Film Solar Cells using Graphene Transparent Electrode

^○（PC）Ryousuke Ishikawa¹, Shinsuke Miyajima², Makoto Konagai^1,2 (JST¹, Tokyo Institute of Technology²)

Oral presentation

[19a-E12-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

Wed. Mar 19, 2014 9:15 AM - 11:45 AM E12 (E206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[19a-E12-1] Comparison between LTEM and EL/PL methods for the analysis of a polycrystalline Si solar cell

^○Hidetoshi Nakanishi¹, Akira Ito¹, Kazuhisa Takayama², Iwao Kawayama², Hironaru Murakami², Masayoshi Tonouchi² (Dainippon Screen Mfg.¹, ILE Osaka Univ.²)

9:30 AM - 9:45 AM

[19a-E12-2] An examination of the acceleration method of thermal cycling test for crystalline silicon photovoltaic modules

^○Soh Suzuki^1,2, Tadanori Tanahashi², Takuya Doi³, Atsushi Masuda³ (PVTEC¹, ESPEC Corp.², AIST³)

9:45 AM - 10:00 AM

[19a-E12-3] Degradation phenomena and their relationship between photovoltaic modules after field test and damp heat test

^○Masaru Kadowaki¹, Tomoro Hakari², Shigenori Shimizu³, Kentaro Suzuki⁴, Yushi Heta⁵, Hideki Tanaka⁶, Sadao Sakamoto⁷, Takuya Doi⁷, Atsushi Masuda⁷ (Dai Nippon Printing¹, Toppan Printing², Hitachi Chemical³, Teijin DuPont Films⁴, DuPont K.K.⁵, Tokyo Electron⁶, AIST⁷)

10:00 AM - 10:15 AM

[19a-E12-4] Influence of Cross-Linking Conditions of EVA on Long-Term Stability for Crystalline Silicon Photovoltaic Modules

^○Sachiko Jonai¹, Kohjiro Hara¹, Hidenari Nakahama², yuji Tsutsui², atsushi Masuda¹ (AIST¹, Nissinbo HD²)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[19a-E12-5] Study on delamination in photovoltaic modules induced by acceleration test and field exposure

^○Naomi Uchiyama¹, Atsushi Masuda¹, Kazunari Mitsuhashi², Akihiro Tsutsumida², Jyunichi Watanabe², Jyunko Shirataki², Keiko Matsuda² (AIST¹, TRC²)

10:45 AM - 11:00 AM

[19a-E12-6] Acceleration of Potential-induced Degradation by Salt-mist Stress in c-Si PV Modules

Soh Suzuki¹, Naoki Nishiyama², Seiji Yoshino³, Takumi Ujiro², Shin Watanabe³, Takuya Doi⁴, Atsushi Masuda⁴, ^○Tadanori Tanahashi¹ (ESPEC CORP.¹, JFE Techno-Res.², NPC Incorp.³, AIST⁴)

11:00 AM - 11:15 AM

[19a-E12-7] Influence of PID test voltage on power reduction of photovoltaic modules

^○Masanao Inoue¹, Kohjiro Hara¹, Keizo Okuwaki², Atsushi Masuda¹, Atsuo Okugawa² (AIST¹, KIKUSUI²)

11:15 AM - 11:30 AM

[19a-E12-8] Investigation on Anti-Reflection Coating with High Resistance to Potential Induced Degradation for Crystalline Silicon Solar Cells

^○Ken Mishina¹, Atsufumi Ogishi¹, Norihiro Ikeno², Kiyoshi Ueno³, Tetsuya Saruwatari¹, Kohjiro Hara⁴, Atsushi Ogura², Takuya Doi⁴, Toshiharu Yamazaki³, Atsushi Masuda⁴ (Shimadzu Corporation¹, Meiji Univ.², Choshu Industry³, AIST⁴)

11:30 AM - 11:45 AM

[19a-E12-9] Influence and path of humidity ingress into a-Si photovoltaic module, and effective barrier method

^○Michio Toda¹, Masanao Inoue², Chizuko Yamamoto², Atsushi Masuda² (SAES Getters¹, AIST²)

Oral presentation

[19p-E12-1~19] 16.3 Bulk, thin-film and other silicon-based solar cells

Wed. Mar 19, 2014 1:15 PM - 6:30 PM E12 (E206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[19p-E12-1] Gas-atmosphere depended interface property between releasing coating layer and molten silicon

^○Jianyong Li¹, Karolin Jiptner², Takashi Kimura², Takashi Sekiguchi², Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto³, Atsushi Ogura¹ (Meiji Univ.¹, NIMS², Kyushu Univ.³)

1:30 PM - 1:45 PM

[19p-E12-2] 50 cm square cast Si growth and its characterization (Ⅱ)

^○Yoshiji Miyamura¹, Hirofumi Harada¹, Jun Chen¹, Takashi Sekiguchi¹, Satoshi Nakano², Koichi Kakimoto² (NIMS¹, Kyushu Univ.²)

1:45 PM - 2:00 PM

▲ [19p-E12-3] Thermal-stress induced dislocation distribution in seed-cast and CZ Si ingots

^○Karolin Jiptner¹, Bing Gao², Yoshiji Miyamura¹, Hirofumi Harada¹, Koichi Kakimoto², Takashi Sekiguchi¹ (NIMS¹, Kyushu Univ.²)

2:00 PM - 2:15 PM

△ [19p-E12-4] Correlation between PL intensity and dislocation density in a Si crystal

^○Shunya Ninomiya¹, Kentaro Kutsukake^1,2, Yutaka Ohno¹, Momoko Deura¹, Noritaka Usami³, Ichiro Yonenaga¹ (Tohoku Univ.¹, JST PRESTO², Nagoya Univ.³)

2:15 PM - 2:30 PM

▲ [19p-E12-5] Correlation between Grain Boundary Character and Strain in Multicrystalline Silicon

^○Jun Chen¹, Masayuki Fukuzawa², Ronit Prakash^1,3, Jianyong Li^1,4, Karolin Jiptner¹, Yoshiji Miyamura¹, Hirofumi Harada¹, Takashi Sekiguchi^1,3 (NIMS¹, KIT², Univ. of Tsukuba³, Meji Univ.⁴)

Break 14:30〜14:45 （2:30 PM - 2:45 PM）

2:45 PM - 3:00 PM

△ [19p-E12-6] Polarized Photoluminescence Imaging Analysis around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers for Solar Cells

^○Gen Kato^1,2, Michio Tajima^1,2, Hiroyuki Toyota², Atsushi Ogura¹ (Meiji Univ.¹, ISAS/JAXA²)

3:00 PM - 3:15 PM

[19p-E12-7] Fe Impurity Behavior in Fe-deposited Boundary of ⁵⁷Fe-contaminated Si

^○Kiyotaka Tanaka¹, Yuji Ino¹, Yutaka Yoshida² (SIST¹, SIST²)

3:15 PM - 3:30 PM

△ [19p-E12-8] Photoluminescence analysis of impurity band in highly doped and highly compensated Si

^○Koji Tanaka^{1, 2}, Michio Tajima^{1, 2}, Hiroyuki Toyota², Atsushi Ogura¹ (Meiji Univ.¹, ISAS/JAXA²)

3:30 PM - 3:45 PM

[19p-E12-9] Electrical characterization of Si wafers using terahertz time domain spectroscopy

^○Ikuo Mizobata¹, Hidetoshi Nakanishi¹, Akira Ito¹, Kazuo Nakajima², Kohei Morishita², Ryota Murai² (Dainippon Screen Mfg.¹, Kyoto Univ.²)

3:45 PM - 4:00 PM

[19p-E12-10] Focusing Characteristic of the New MCX Lens Mounted on the New Mössbauer Microscope

^○Yuji Ino¹, Hiroyoshi Soejima¹, Kazuo Hayakawa¹, Kenichi Yukihira¹, Yoshihito Harada², Takuya Sakai³, Akio Suzuki³, Yutaka Yoshida¹ (Shizuoka Inst. Sci & Tech.¹, APCO², Hamamatsu Photonics³)

4:00 PM - 4:15 PM

[19p-E12-11] Effects of reverse bias on the stability of the impurity levels in mc-Si for solar cells

^○Masakazu Yabuki¹, Tatsuro Tokura², Yoshifumi Yamashita², Takeshi Nishikawa², Yasuhiko Hayashi² (Okayama Univ.¹, Graduate School of Natural Science and Technology, Okayama Univ.²)

Break 16:15〜16:30 （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

△ [19p-E12-12] Emitter layer design of thermal diffusion process for N-type crystalline silicon solar cells

^○Akira Harada¹, Kyotaro Nakamura¹, Ikuo Kurachi², Kentaro Yoshioka³, Norihiro Ikeno¹, Atsushi Ogura¹ (Meiji Univ.¹, D&S Inc.², AMAYA Co., Ltd.³)

4:45 PM - 5:00 PM

[19p-E12-13] Preparation of Phosphate-Coating Paste for Doping in c-Si Solar Cells

^○（M2）Ken Fukatsu¹, Abdullah Uzum¹, Tomitarou Harada², Yasuaki Ishikawa³, Yasuharu Uraoka³, Seigo Ito¹ (Univ. of Hyogo¹, Daiwa Sangyo Co. Ltd.², NAIST³)

5:00 PM - 5:15 PM

[19p-E12-14] Effect of the difference in annealing conditions on defects and impurities in a multicrystalline Si ingot

^○Isao Takahashi¹, Joonwichien Supawan¹, Satoru Matsushima¹, Noritaka Usami¹ (Nagoya Univ.¹)

5:15 PM - 5:30 PM

[19p-E12-15] Doped layer fabricated by laser doping of Si nanoparticles analysis using Raman spectroscopy

^○Miho Momose^1,2, Yukio Furukawa² (Teijin Ltd.¹, Waseda Univ.²)

5:30 PM - 5:45 PM

[19p-E12-16] Characterizations of Laser Point Contacts for c-Si Solar Cells

^○Shunsuke Urave¹, Shinsuke Miyajima¹, Makoto Konagai^1,2 (Graduate School of Science and Engineering, Tokyo Tech.¹, PVREC, Tokyo Tech.²)

5:45 PM - 6:00 PM

[19p-E12-17] Preparation of Si solar cells using ARC layer by non-vacuum method

^○Norihisa Harano¹, Abdullah Uzum¹, Yasuaki Ishikawa², Yasuharu Uraoka², Seiya Yoshinaga², Tomitarou Harada³, Yutaka Kimura⁴, Kenji Tanimoto⁴, Seigo Ito¹ (Univ. of Hyogo¹, NAIST², Daiwa Sangyo Co. Ltd.³, Nissan Chemical Industries ltd.⁴)

6:00 PM - 6:15 PM

[19p-E12-18] Fabrication of Interdigitated Back Contact Silicon Heterojunction Solar Cells with Patterning Process using Inkjet Printing

^○Tetsuya Kaneko¹, Aiko Sato¹, Hiroshi Noge¹, Kimihiko Saitou¹, Michio Kondo^1,2 (Fukushima Univ.¹, AIST²)

6:15 PM - 6:30 PM

[19p-E12-19] Lifetime Measurement of Crystal Silicon Solar Cells Measured by Impedance Analysis

^○（M1）Hiroyuki Kanda¹, Abdullah Uzum¹, Seigo Ito¹ (Univ. of Hyogo¹)

Sessions

16. Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[17a-PA4-1~18] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [17a-PA4-1] Grain Evolution in Multicrystalline Silicon Grown from Small Randomly Oriented Seeds

△ [17a-PA4-6] Gas phase diagnostics of PEDOT:PSS mist transport and morphology on textured Si

△ [17a-PA4-7] 2D mapping of photovoltaic performance of c-Si/PEDOT:PSS heterojunction solar cells

▲ [17a-PA4-8] 2D map of photovoltaic parameters in c-Si/PEDOT:PSS heterojunction solar cells

[18a-E12-1~10] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [18a-E12-2] Reduction of the interface SiH2 content for suppression of the interface recombination in a-Si:H/c-Si heterojunction solar cells

▼ [18a-E12-4] Drastic reduction in surface recombination velocity of Cat-CVD SiNx/c-Si structures by phosphorus (P) Cat-doping

△ [18a-E12-6] Study of Stacking Surface Passivation Structure for Crystalline Si Solar Cells

△ [18a-E12-9] Passivation of Si surfaces by using nitric acid oxidation of silicon (NAOS) method and improvement of crystalline silicon solar cell characteristics.

▲ [18a-E12-10] Oxygen Radical Treatment used for Fabricating Metal-Insulator-Semiconductor Solar Cells

[18p-E12-1~21] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [18p-E12-9] Minority Carrier Lifetime of polycrystalline silicon nanowires

▲ [18p-E12-10] A Simple Alternative of Barrier Layer Removal of Nanoporous Alumina Template on Silicon Substrate

▲ [18p-E12-14] Photoelectrical characterization of organically surface-modified nanocrystalline silicon membrane cells

△ [18p-E12-16] Fabrication of amorphous silicon-based semiconductors with low SiH2 contents by Mg introduction

▲ [18p-E12-17] Formation of a-Si:H films from cyclopentasilane by using parallel deposition system at atmospheric pressure

△ [18p-E12-19] Study of Growth Mechanism of a-Si1-xCx:H during Plasma-Enhanced Chemical Vapor Deposition using Quantum Chemical Molecular Dynamics Method

▲ [18p-E12-20] Defect analysis of amorphous silicon solar cells by Fourier transform photocurrent spectroscopy

△ [18p-E12-21] Silicon Thin-Film Solar Cells using Graphene Transparent Electrode

[19a-E12-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[19p-E12-1~19] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [19p-E12-3] Thermal-stress induced dislocation distribution in seed-cast and CZ Si ingots

△ [19p-E12-4] Correlation between PL intensity and dislocation density in a Si crystal

▲ [19p-E12-5] Correlation between Grain Boundary Character and Strain in Multicrystalline Silicon

△ [19p-E12-6] Polarized Photoluminescence Imaging Analysis around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers for Solar Cells

△ [19p-E12-8] Photoluminescence analysis of impurity band in highly doped and highly compensated Si

△ [19p-E12-12] Emitter layer design of thermal diffusion process for N-type crystalline silicon solar cells

△ [18a-E12-2] Reduction of the interface SiH₂ content for suppression of the interface recombination in a-Si:H/c-Si heterojunction solar cells

▼ [18a-E12-4] Drastic reduction in surface recombination velocity of Cat-CVD SiN_x/c-Si structures by phosphorus (P) Cat-doping

△ [18p-E12-16] Fabrication of amorphous silicon-based semiconductors with low SiH₂ contents by Mg introduction

△ [18p-E12-19] Study of Growth Mechanism of a-Si_1-xC_x:H during Plasma-Enhanced Chemical Vapor Deposition using Quantum Chemical Molecular Dynamics Method