[18a-E12-1~10] 16.3 シリコン系太陽電池

▼ [18a-E12-4] Drastic reduction in surface recombination velocity of Cat-CVD SiN_x/c-Si structures by phosphorus (P) Cat-doping

^○（D）Cham Thi Trinh^1,2，Koyama Koichi^1,2，Ohdaira Keisuke^1,2，Matsumura Hideki^1,2 (JAIST¹，JST CREST²)

キーワード：Phosphorus Cat-doping,Surface recombination velocity,Application of Cat-CVD for passivation