[18a-E13-1~11] 15.4 III-V-group nitride crystals

[18a-E13-1] Mechanism of the strain modulation of GaN grown on Si substrates by a thin AlN/GaN superlattice interlayer

^○Xu Qiang Shen¹, Tokio Takahashi¹, Toshihide Ide¹, Mitsuaki Shimizu¹ (AIST¹)

Keywords:GaN,Si,MBE