The 61st JSAP Spring Meeting, 2014

Presentation information

Print

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-E13-1~11] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 9:00 AM - 12:00 PM E13 (E301)

9:30 AM - 9:45 AM

[18a-E13-3] Influence of mono-layer Graphene on growth process of GaN on mono-layer Graphene/SiO2-film/Si(001) substrate by ECR-MBE method

○Tokuo Yodo1, Yuuichi Mukaida1, Daishi Shiojiri2, Mamoru Yoshimoto2 (Osaka Inst. of Tech.1, Tokyo Inst. of Tech.2)

Keywords:GaN,Graphene