[18a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

△ [18a-E14-8] Responsivity improvement of photodiode in a MEMS Fabry-Perot interferometric surface stress sensor

^○Yoshihiro Masuya¹, Kazuhiro Takahashi^1,2, Ryo Ozawa¹, Takeshi Hizawa¹, Makoto Ishida¹, Kazuaki Sawada^1,2 (Toyohashi Univ. of Tech¹, JST-CREST²)

Keywords:MEMS,フォトダイオード