[18a-E5-1~8] 15.6 IV-group-based compounds

△ [18a-E5-2] Reduction of interface state density at 4H-SiC(0001) MOS interface by thermodynamic and kinetic approach

^○Richard Heihachiro Kikuchi¹, Koji Kita^1,2 (Univ. of Tokyo¹, JST-PRESTO²)

Keywords:熱酸化膜,電気特性,SiC