Improvement of Interfacial Properties of High-<i>k</i>/Ge Gate Stacks by Post-Metal Anneal

Ryohei Tanaka

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[18p-D8-1~15] 13.2 Insulator technology

Tue. Mar 18, 2014 1:30 PM - 5:30 PM D8 (D215)

1:30 PM - 1:45 PM

[18p-D8-1] Improvement of Interfacial Properties of High-k/Ge Gate Stacks by Post-Metal Anneal

^○Ryohei Tanaka¹, Iori Hideshima¹, Yuya Minoura¹, Akitaka Yoshigoe², Yuden Teraoka², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, JAEA²)

Keywords:Ge,high-k

« Previous in this session
Next in this session »

▲