The 61st JSAP Spring Meeting, 2014

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Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[18p-D8-1~15] 13.2 Insulator technology

Tue. Mar 18, 2014 1:30 PM - 5:30 PM D8 (D215)

4:30 PM - 4:45 PM

[18p-D8-12] Impact of ALD process on of La2O3/InGaAs interface roughness

○Hiroshi Omine1, Dariush Hassan Zadeh1, Kuniyuki Kakushima2, Akira Nishiyama2, Nobuyuki Sugii2, Yoshinori Kataoka2, Hitoshi Wakabayashi2, Kazuo Tsutsui2, Kenji Natori1, Hiroshi Iwai1 (FRC Tokyo Tech1, IGSSE Tokyo Tech2)

Keywords:High-k,InGaAs,ALD