Electron mobility improvement due to GaOx passivation layer formed by pre-deposition anneal in HfO2/In0.53Ga0.47As nMISFET with sub-1.0 nm EOT

Minoru Oda

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Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[18p-D8-1~15] 13.2 Insulator technology

Tue. Mar 18, 2014 1:30 PM - 5:30 PM D8 (D215)

5:15 PM - 5:30 PM

△ [18p-D8-15] Electron mobility improvement due to GaO_x passivation layer formed by pre-deposition anneal in HfO₂/In_0.53Ga_0.47As nMISFET with sub-1.0 nm EOT

^○Minoru Oda¹, Toshifumi Irisawa¹, Yuuichi Kamimuta¹, Jevasuwan Wipakorn¹, Tatsuro Maeda¹, Osamu Ichikawa², Toshio Ishihara², Osada Takenori², Tsutomu Tezuka¹ (AIST-GNC¹, Sumitomo Chemical Co. Ltd.²)

Keywords:InGaAs,GaOx,mobility

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Presentation information

[18p-D8-1~15] 13.2 Insulator technology

△ [18p-D8-15] Electron mobility improvement due to GaOx passivation layer formed by pre-deposition anneal in HfO2/In0.53Ga0.47As nMISFET with sub-1.0 nm EOT

△ [18p-D8-15] Electron mobility improvement due to GaO_x passivation layer formed by pre-deposition anneal in HfO₂/In_0.53Ga_0.47As nMISFET with sub-1.0 nm EOT