Interface Engineering of HfO<sub>2</sub>/Ge Gate Stack Structure by Rutile TiO<sub>2</sub> Inter Layer

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

Tue. Mar 18, 2014 1:30 PM - 5:30 PM D8 (D215)

2:15 PM - 2:30 PM

^○Kazuyoshi Kobashi^1,2, Takahiro Nagata², Toshihide Nabatame², Yoshiyuki Yamashita², Atsushi Ogura¹, Toyohiro Chikyow² (Meiji Univ.¹, NIMS²)

Keywords:High-k/Ge interface