[18p-D8-1~15] 13.2 Insulator technology

△ [18p-D8-8] The impact of Ge composition on the improvement of the interface trap density at Al2O3/SiGe MOS interface with plasma post-nitridation

^○（M2）Jaehoon Han^1,2, Rui Zhang^1,2, Takenori Osada³, Masahiko Hata³, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST-CREST², Sumitomo Chemical Co. Ltd.³)

Keywords:SiGe,MOS界面,ECRプラズマ後窒化