The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[18p-D8-1~15] 13.2 Insulator technology

Tue. Mar 18, 2014 1:30 PM - 5:30 PM D8 (D215)

3:15 PM - 3:30 PM

[18p-D8-8] The impact of Ge composition on the improvement of the interface trap density at Al2O3/SiGe MOS interface with plasma post-nitridation

○(M2)Jaehoon Han1,2, Rui Zhang1,2, Takenori Osada3, Masahiko Hata3, Mitsuru Takenaka1,2, Shinichi Takagi1,2 (Univ. of Tokyo1, JST-CREST2, Sumitomo Chemical Co. Ltd.3)

Keywords:SiGe,MOS界面,ECRプラズマ後窒化