[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18p-E1-10] Forming Characteristics of NiO-based Resistance Change Ramdom Access Memory

^○西佑介，篠倉弘樹，岩田達哉，木本恒暢 (京大院工)

キーワード：ReRAM