[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology

▲ [18p-E1-12] Effect of lowering resistivity of an insulator on the I-V characteristics of In/Al2O3/Al ReRAM

^○Yusuke Tanimoto¹, Yoshihumi Hamada², Shintaro Otsuka², Tomohiro Shimizu², Shoso Shingubara², Tadataka Watanabe¹, Yoshiki Takano¹, Kouichi Takase¹ (Nihon Univ.¹, Kansai Univ.²)

Keywords:ReRAM,ポーラスアルミナ