Effect of Hydrogen on Electronic Property of <i>a</i>-InGaZnO

Yoshihiro Ueoka

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[18p-E10-1~20] Nanocarbon Technology

Tue. Mar 18, 2014 1:15 PM - 6:30 PM E10 (E204)

1:15 PM - 1:30 PM

[18p-E10-1] Effect of Hydrogen on Electronic Property of a-InGaZnO

^○Yoshihiro Ueoka¹, Yasuaki Ishikawa^1,2, Bermundo Juan Paolo¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Masahiro Horita^1,2, Yukiharu Uraoka^1,2 (Nara Inst. Sci. Tech.¹, CREST²)

Keywords:薄膜トランジスタ,IGZO,水素

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