[18p-E10-1~20] Nanocarbon Technology

△ [18p-E10-17] Analysis of degradation phenomenon in oxide thin-film transistor caused by self-heating under pulse voltage stress

^○Kahori Kise¹, Shigekazu Tomai², Yoshihiro Ueoka¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Koki Yano², Dapeng Wang³, Mamoru Huruta³, Masahiro Horirta^1,4, Yasuaki Ishikawa^1,4, Yukiharu Uraoka^1,4 (NAIST¹, Idemitsu Co.², Kochi Univ. of Tech.³, CREST⁴)

Keywords:パルスストレス,TAOS,発熱劣化