[18p-E10-1~20] Nanocarbon Technology

[18p-E10-2] Charge compensation and hydrogen passivation observed in a-In-Ga-Zn-O films deposited by PLD in vacuum

^○Toshio Kamiya^1,2, Herms Johannes¹, Takatoshi Orui¹, Yuichiro Hanyu¹, Hidenori Hiramatsu^1,2, Hideya Kumomi², Hideo Hosono^1,2,3, Shigenori Ueda⁴, Naoki Ohashi^2,4 (MSL Tokyo Tech¹, MCES Tokyo Tech², FRC Tokyo Tech³, NIMS⁴)

Keywords:アモルファス酸化物半導体,不純物,欠陥