The 61st JSAP Spring Meeting, 2014

Presentation information

Print

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18p-E11-1~14] 14.4 Optical properties and light-emitting devices

Tue. Mar 18, 2014 1:15 PM - 5:00 PM E11 (E205)

3:00 PM - 3:15 PM

[18p-E11-7] Preparation of rare-earth doped GaN films grown by radical N2 assisted compound-source MBE (2)

○Shinji Yudate1, Yuki Koyama1, Akira Miyata1, Sho Shirakata1 (Ehime Univ.1)

Keywords:CS-MBE rare earth