Improvement of red luminescent efficiency in Eu-doped GaN/AlGaN MQW LED

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Tue. Mar 18, 2014 1:15 PM - 5:00 PM E11 (E205)

3:15 PM - 3:30 PM

^○Taknori Arai¹, Ryuta Wakamatsu¹, Dong-gun Lee¹, Atsushi Koizumi¹, Fujiwara Yasufumi¹ (Osaka Univ.¹)

Keywords:rare-earth doped GaN,Eu